HUF76633P3 Fairchild Semiconductor, HUF76633P3 Datasheet

MOSFET N-CH 100V 38A TO-220AB

HUF76633P3

Manufacturer Part Number
HUF76633P3
Description
MOSFET N-CH 100V 38A TO-220AB
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF76633P3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 39A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
1820pF @ 25V
Power - Max
145W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUF76633P3
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HUF76633P3
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
NOTES:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
38A, 100V, 0.036 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
Symbol
Absolute Maximum Ratings
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
1. T
Continuous (T
Continuous (T
Continuous (T
Continuous (T
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . T
J
= 25
JEDEC TO-220AB
HUF76633P3
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
o
C to 150
C
C
C
C
(FLANGE)
= 25
= 25
= 100
= 100
DRAIN
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
o
o
C.
SOURCE
C, V
C, V
o
o
GS
C, V
C, V
G
GS
GS
= 20k ) (Note 1) . . . . . . . . . . . . . V
DRAIN
GS
GS
GATE
= 5V) . . . . . . . . . . . . . . . . . . . . . . I
= 10V) (Figure 2) . . . . . . . . . . . . . I
= 5V) . . . . . . . . . . . . . . . . . . . . . I
= 4.5V) (Figure 2) . . . . . . . . . . . I
D
S
SOURCE
GATE
T
Data Sheet
For severe environments, see our Automotive HUFA series.
C
= 25
JEDEC TO-263AB
HUF76633S3S
o
C, Unless Otherwise Specified
(FLANGE)
DRAIN
J
, T
DGR
DSS
STG
pkg
DM
GS
D
D
D
D
D
L
Features
• Ultra Low On-Resistance
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76633S3ST.
HUF76633P3
HUF76633S3S
- r
- r
- Temperature Compensated PSPICE® and SABER™
- Spice and SABER Thermal Impedance Models
- www.Fairchildsemi.com
PART NUMBER
Electrical Models
HUF76633P3, HUF76633S3S
DS(ON)
DS(ON)
December 2001
= 0.035
= 0.036
HUF76633P3, HUF76633S3S
TO-220AB
TO-263AB
GS
Figures 6, 17, 18
V
V
PACKAGE
GS
GS
-55 to 175
Curves
Figure 4
0.97
100
100
145
300
260
38
39
27
27
10V
5V
16
HUF76633P3, HUF76633S3S Rev. B
76633P
76633S
BRAND
UNITS
W/
o
o
o
W
V
V
V
A
A
A
A
C
C
C
o
C

Related parts for HUF76633P3

HUF76633P3 Summary of contents

Page 1

... HUF76633S3ST Unless Otherwise Specified DSS DGR STG L pkg = 0.035 10V 0.036 Curves GS PACKAGE BRAND TO-220AB 76633P TO-263AB 76633S HUF76633P3, HUF76633S3S 100 100 Figure 4 Figures 6, 17, 18 145 0.97 -55 to 175 300 260 HUF76633P3, HUF76633S3S Rev. B UNITS ...

Page 2

... 27A, dI /dt = 100A MIN TYP 100 - o C (Figure 12 0.029 - 0.030 - 0.031 - - - - - - - 12 - 110 - 7 50V 1.0mA - 1820 - 415 - 115 MIN TYP - - - - - - - - HUF76633P3, HUF76633S3S Rev. B MAX UNITS - 250 A 100 0.035 0.036 0.037 o 1.03 C C/W 185 150 220 2 MAX UNITS 1.25 V 1.0 V 113 ns 425 nC ...

Page 3

... FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V = 10V 4. 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUF76633P3, HUF76633S3S Rev. B 175 ...

Page 4

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 3 10V 39A GS D PULSE DURATION = 80 s 2.5 DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 0.5 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE HUF76633P3, HUF76633S3S Rev + 150 3. 120 160 200 o C) ...

Page 5

... JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE 50V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g GATE CURRENT 500 V = 10V 50V 39A 400 t 300 200 100 GATE TO SOURCE RESISTANCE ( ) GS FIGURE 16. SWITCHING TIME vs GATE RESISTANCE HUF76633P3, HUF76633S3S Rev. B 120 160 200 39A = 27A = 15A d(OFF d(ON ...

Page 6

... FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g( g(TH FIGURE 20. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 22. SWITCHING TIME WAVEFORM HUF76633P3, HUF76633S3S Rev 10V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN 18 EBREAK - 16 21 MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF76633P3, HUF76633S3S Rev. B DRAIN 2 SOURCE 3 ...

Page 8

... LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUF76633P3, HUF76633S3S Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF76633P3, HUF76633S3S Rev. B ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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