FQA16N25C Fairchild Semiconductor, FQA16N25C Datasheet

no-image

FQA16N25C

Manufacturer Part Number
FQA16N25C
Description
MOSFET N-CH 250V 17.8A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQA16N25C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 8.9A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
17.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
53.5nC @ 10V
Input Capacitance (ciss) @ Vds
1080pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-3P-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQA16N25C
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2004 Fairchild Semiconductor Corporation
FQA16N25C
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
, T
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
TO-3P
FQA Series
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 17.8A, 250V, R
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 68 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G
0.24
Typ
DS(on)
--
--
FQA16N25C
-55 to +150
D
S
= 0.27Ω @V
17.8
71.2
± 30
17.8
18.0
1.45
11.3
250
410
180
300
5.5
Max
0.69
40
--
QFET
GS
= 10 V
Units
W/°C
Units
Rev. A, March 2004
V/ns
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

Related parts for FQA16N25C

FQA16N25C Summary of contents

Page 1

... C Parameter QFET = 0.27Ω DS(on ● ● ◀ ◀ ▲ ▲ G ● ● ● ● S FQA16N25C Units 250 17.8 11.3 71.2 ± 30 410 mJ 17.8 18.0 mJ 5.5 V/ns 180 1.45 W/°C -55 to +150 °C 300 °C Typ Max ...

Page 2

... G ≤ 17.8A, di/dt ≤ 300A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C ...

Page 3

... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3000 2500 2000 C iss 1500 C oss 1000 C rss ※ Notes : 500 MHz Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation Notes : ※ 1. 250µ s Pulse Test ℃ Figure 2. Transfer Characteristics 20V GS ※ Note : ℃ ...

Page 4

... J 3. Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area Figure 11. Transient Thermal Response Curve ©2004 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 µA D 0.0 -100 100 150 200 o C] Figure 8. On-Resistance Variation 20 15 100 µ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 15.60 13.60 ø3.20 0.10 9.60 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2004 Fairchild Semiconductor Corporation TO-3P 0.20 0.20 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters Rev. A, March 2004 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

Related keywords