ISL9N303AS3 | |
|---|---|
| Manufacturer Part Number | ISL9N303AS3 |
| Description | MOSFET N-CH 30V 75A TO-262AA |
| Manufacturer | Fairchild Semiconductor |
| Series | UltraFET™ |
| ISL9N303AS3 datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
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Specifications of ISL9N303AS3 | |||
|---|---|---|---|
| Fet Type | MOSFET N-Channel, Metal Oxide | Fet Feature | Logic Level Gate |
| Rds On (max) @ Id, Vgs | 3.2 mOhm @ 75A, 10V | Drain To Source Voltage (vdss) | 30V |
| Current - Continuous Drain (id) @ 25° C | 75A | Vgs(th) (max) @ Id | 3V @ 250µA |
| Gate Charge (qg) @ Vgs | 172nC @ 10V | Input Capacitance (ciss) @ Vds | 7000pF @ 15V |
| Power - Max | 215W | Mounting Type | Through Hole |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
PrevNext
PSPICE Electrical Model
.SUBCKT ISL9N303AP3 2 1 3 ;
rev May 2001
Ca 12 8 6.3e-9
Cb 15 14 3.8e-9
Cin 6 8 6.7e-9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 30.6
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
GATE
It 8 17 1
1
Lgate 1 9 5.618e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 1.98e-9
RLgate 1 9 56.1
RLdrain 2 5 15
RLsource 3 7 19.8
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 0.9e-3
Rgate 9 20 0.639
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 1.8e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*500),3))}
.MODEL DbodyMOD D (IS=8e-11 N=1.06 RS=2.3e-3 TRS1=1.1e-3 TRS2=3e-6
+ CJO=2.6e-9 M=0.43 TT=3e-10 XTI=0.1)
.MODEL DbreakMOD D (RS=0.3 TRS1=1.8e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=2.05e-9 IS=1e-30 N=10 M=0.46)
.MODEL MstroMOD NMOS (VTO=2.16 KP=270 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MmedMOD NMOS (VTO=1.65 KP=20 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=0.639)
.MODEL MweakMOD NMOS (VTO=1.29 KP=0.1 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=6.39 RS=0.1)
.MODEL RbreakMOD RES (TC1=1.05e-3 TC2=-7e-7)
.MODEL RdrainMOD RES (TC1=1e-2 TC2=1.8e-5)
.MODEL RSLCMOD RES (TC1=3.5e-4 TC2=5e-6)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-3e-3 TC2=-11e-6)
.MODEL RvtempMOD RES (TC1=-1.5e-3 TC2=1.4e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5 VOFF=-4)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-5)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.9 VOFF=0.2)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.2 VOFF=-0.9)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2002 Fairchild Semiconductor Corporation
DPLCAP
5
10
51
+
RSLC2
5
51
-
-
6
ESG
8
EVTHRES
+
21
+
-
19
LGATE
EVTEMP
8
RGATE
+
6
18
-
22
9
20
MSTRO
RLGATE
CIN
S1A
S2A
12
15
13
14
8
13
S1B
S2B
13
CB
CA
14
+
+
+
6
5
EGS
EDS
8
8
-
-
-
LDRAIN
DRAIN
RLDRAIN
RSLC1
DBREAK
ESLC
11
50
+
17
DBODY
RDRAIN
EBREAK
18
-
16
MWEAK
MMED
LSOURCE
SOURCE
8
7
RSOURCE
RLSOURCE
RBREAK
17
18
RVTEMP
19
IT
-
VBAT
+
8
22
RVTHRES
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1
2
3
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