FCB11N60FTM Fairchild Semiconductor, FCB11N60FTM Datasheet

MOSFET N-CH 600V 11A D2PAK

FCB11N60FTM

Manufacturer Part Number
FCB11N60FTM
Description
MOSFET N-CH 600V 11A D2PAK
Manufacturer
Fairchild Semiconductor
Series
SuperFET™r
Datasheet

Specifications of FCB11N60FTM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1490pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FCB11N60FTMTR
©2008 Fairchild Semiconductor Corporation
FCB11N60F Rev. A2
FCB11N60F
600V N-Channel MOSFET
Features
• 650V @T
• Typ. R
• Fast Recovery Type ( t
• Ultra low gate charge (typ. Q
• Low effective output capacitance (typ. C
• 100% avalanche tested
• RoHS Compliant
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
θJA
T
STG
*
DS(on)
J
= 150°C
= 0.32Ω
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
rr
= 120ns )
g
= 40nC)
G
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
S
Parameter
C
oss
= 25°C)
.eff = 95pF)
D
FCB Series
2
-PAK
D
C
C
= 25°C)
= 100°C)
1
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TM
G
is, Fairchild’s proprietary, new generation of high
FCB11N60F
FCB11N60F
-55 to +150
± 30
12.5
600
340
125
300
1.0
11
33
11
50
62.5
7
1.0
S
40
D
SuperFET
December 2008
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FCB11N60FTM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient* θJA R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation FCB11N60F Rev. A2 Description TM SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. ...

Page 2

... Package Marking and Ordering Information Device Marking Device FCB11N60F FCB11N60FTM Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT / Coefficient J BV Drain-Source Avalanche Breakdown DS Voltage I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics Top : 15.0 V 10.0 V 8.0 V 7 6.0 V Bottom : 5 ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area 2 10 Operation in This Area is Limited by ...

Page 5

Unclamped Inductive Switching Test Circuit & Waveforms FCB11N60F Rev. A2 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

Peak Diode Recovery dv/dt Test Circuit & Waveforms FCB11N60F Rev www.fairchildsemi.com ...

Page 7

Mechanical Dimensions FCB11N60F Rev PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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