FDA2712 Fairchild Semiconductor, FDA2712 Datasheet

MOSFET N-CH 250V 64A TO-3PN

FDA2712

Manufacturer Part Number
FDA2712
Description
MOSFET N-CH 250V 64A TO-3PN
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of FDA2712

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
34 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
64A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
129nC @ 10V
Input Capacitance (ciss) @ Vds
10175pF @ 25V
Power - Max
357W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
FDA2712 Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
dv/dt
P
T
T
R
R
D
DM
FDA2712
N-Channel UltraFET Trench MOSFET
250V, 64A, 34mΩ
Features
• R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
Applications
• PDP application
J
L
DSS
GSS
AS
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
= 29.2mΩ @V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
GS
D
= 10 V, I
S
D
= 40A
TO-3PN
Parameter
Parameter
-Continuous (T
-Continuous (T
(T
- Derate above 25
- Pulsed
C
= 25
o
C)
DS(on)
C
C
= 25
= 100
1
o
C
o
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been especial-
ly tailored to minimize the on-state resistance and yet maintain
superior switching performance.
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
G
-55 to +150
Ratings
Ratings
2.85
250
±30
240
245
357
300
0.35
4.5
S
64
44
D
40
UltraFET
www.fairchildsemi.com
April 2007
Units
W/
Units
o
V/ns
mJ
C/W
o
o
W
V
V
A
A
C
C
o
C
tm

Related parts for FDA2712

FDA2712 Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDA2712 Rev. A Description = 40A This N-Channel MOSFET is produced using Fairchild Semicon- D ductor’s advanced PowerTrench process that has been especial- ly tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Starting ≤ 80A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDA2712 Rev unless otherwise noted C Package Reel Size TO-3PN N/A Test Conditions I = 250μA, V ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 10000 C iss = oss = iss C rss = C gd 8000 6000 C oss 4000 2000 C rss 0 0 Drain-Source Voltage [V] DS FDA2712 Rev. A Figure 2. Transfer Characteristics 1000 100 10 * Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 1000 100 20V GS o ...

Page 4

... Limited DS(on) * Notes : 0 150 J 3. Single Pulse 0. Drain-Source Voltage [ 0 0.2 0.1 0. 0.02 0.01 Single pulse - FDA2712 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 0 250 μ 0.0 100 150 200 -100 Figure 10. Maximum Drain Current 80 100 μ 1ms 40 ...

Page 5

... FDA2712 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDA2712 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDA2712 Rev. A TO-3PN 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDA2712 Rev. A HiSeC™ PowerSaver™ i-Lo™ PowerTrench ImpliedDisconnect™ Programmable Active Droop™ ® IntelliMAX™ QFET ISOPLANAR™ ...

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