FDPF55N06 Fairchild Semiconductor, FDPF55N06 Datasheet - Page 4

• Manufacturer Part Number: FDPF55N06
• Description: MOSFET N-CH 60V 55A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF55N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1510pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP55N06/FDPF55N06 Rev. A
Typical Performance Characteristics
10
10
Figure 9-1. Maximum Safe Operating Area
10
10
10
10
-1
-2
3
2
1
0
10
1.2
1.1
1.0
0.9
0.8
Figure 7. Breakdown Voltage Variation
-100
0
Operation in This Area
is Limited by R
-50
for FDP55N06
V
vs. Temperature
T
DS
DS(on)
J
, Junction Temperature [
, Drain-Source Voltage [V]
0
Figure 10. Maximum Drain Current vs. Case Temperature
10
50
1
DC
60
50
40
30
20
10
0
10 ms
* Notes :
25
1. T
2. T
3. Single Pulse
100
1 ms
C
J
o
= 150
C]
= 25
* Notes :
100
1. V
2. I
o
C
o
C
D
150
µ
GS
10
= 250
s
50
= 0 V
µ
s
µ
A
T
C
200
, Case Temperature [
10
(Continued)
2
75
4
100
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
10
10
o
-1
-2
C]
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
10
Figure 8. On-Resistance Variation
Operation in This Area
is Limited by R
0
125
-50
DS(on)
for FDPF55N06
V
vs. Temperature
DS
150
T
, Drain-Source Voltage [V]
J
, Junction Temperature [
0
DC
10
100 ms
50
1
10 ms
* Notes :
1. T
2. T
3. Single Pulse
1 ms
100
C
J
= 150
= 25
o
C]
100
o
C
o
C
* Notes :
1. V
2. I
µ
10
s
www.fairchildsemi.com
D
150
GS
µ
= 27.5 A
s
= 10 V
10
2
200