IRFS644BYDTU_AS001 Fairchild Semiconductor, IRFS644BYDTU_AS001 Datasheet

no-image

IRFS644BYDTU_AS001

Manufacturer Part Number
IRFS644BYDTU_AS001
Description
MOSFET N-CH 250V 14A TO-220F
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRFS644BYDTU_AS001

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1600pF @ 25V
Power - Max
43W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2001 Fairchild Semiconductor Corporation
IRF644B/IRFS644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converter and
switch mode power supplies.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF Series
TO-220
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 14A, 250V, R
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
IRFS Series
TO-220F
IRF644B
IRF644B
DS(on)
1.11
62.5
139
8.9
0.9
0.5
14
56
-55 to +150
= 0.28
13.9
250
480
300
5.5
14
30
G
IRFS644B
IRFS644B
@V
8.9 *
0.35
14 *
56 *
2.89
62.5
43
GS
--
= 10 V
November 2001
D
S
Rev. A, November 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A

Related parts for IRFS644BYDTU_AS001

IRFS644BYDTU_AS001 Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case Max Thermal Resistance, Case-to-Sink Typ Thermal Resistance, Junction-to-Ambient Max. JA ©2001 Fairchild Semiconductor Corporation Features • 14A, 250V, R • Low gate charge ( typical 47 nC) • Low Crss ( typical 30 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 3.9mH 14A 50V ≤ 14A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 250 ...

Page 3

... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3500 3000 2500 C iss 2000 C 1500 oss C 1000 rss 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 1 10 150 ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics ※ Note : ℃ ...

Page 4

... Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for IRF644B 100 , Case Temperature [ ℃ Figure 10. Maximum Drain Current vs Case Temperature ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.5 D 0.0 100 150 200 -100 ...

Page 5

... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for IRF644B Figure 11-2. Transient Thermal Response Curve for IRFS644B ©2001 Fairchild Semiconductor Corporation (Continued) ※ θ tio ※ tio ( ℃ (t) θ ( ℃ θ (t) θ Rev. A, November 2001 ...

Page 6

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2001 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, November 2001 ...

Page 9

... Package Dimensions (Continued) 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2001 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, November 2001 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

Related keywords