BSN254,126 NXP Semiconductors, BSN254,126 Datasheet

MOSFET N-CH 250V 310MA SOT54

BSN254,126

Manufacturer Part Number
BSN254,126
Description
MOSFET N-CH 250V 310MA SOT54
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSN254,126

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 300mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
310mA
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
120pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
934004930126
BSN254 AMO
BSN254 AMO
Product specification
Supersedes data of 1997 Jun 23
book, halfpage
DATA SHEET
BSN254; BSN254A
N-channel enhancement mode
vertical D-MOS transistor
M3D186
DISCRETE SEMICONDUCTORS
2002 Feb 19

Related parts for BSN254,126

BSN254,126 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BSN254; BSN254A N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 23 2002 Feb 19 ...

Page 2

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown Low R . DSon APPLICATIONS Line current interruptor in telephone sets Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement ...

Page 3

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient; note 1 th j-a Note 1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead ...

Page 4

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor handbook, halfpage Fig.2 Switching times test circuit. 1.2 handbook, halfpage P tot (W) 0.8 0 100 Fig.4 Power derating curve. 2002 Feb 19 handbook, ...

Page 5

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 1.6 handbook, halfpage I D (A) 1.4 1.2 1 0.8 0.6 0.4 0 Fig.6 Typical transfer characteristics. 250 ...

Page 6

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2 handbook, halfpage k 1 DSon ---------------------------------------- - DSon Typical R DSon: ( 250 ...

Page 7

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads (on-circle DIMENSIONS (mm are the original dimensions) UNIT 5.2 ...

Page 8

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS STATUS Objective data Development Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing ...

Page 9

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2002 Feb 19 BSN254; BSN254A NOTES 9 Product specification ...

Page 10

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2002 Feb 19 BSN254; BSN254A NOTES 10 Product specification ...

Page 11

Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor 2002 Feb 19 BSN254; BSN254A NOTES 11 Product specification ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited ...

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