SI4420DY,518 NXP Semiconductors, SI4420DY,518 Datasheet

MOSFET N-CH 30V 12.5A SOT96-1

SI4420DY,518

Manufacturer Part Number
SI4420DY,518
Description
MOSFET N-CH 30V 12.5A SOT96-1
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.SI4420DY518.pdf (12 pages)

Specifications of SI4420DY,518

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 12.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056381518
SI4420DY /T3
SI4420DY /T3
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
1.
Pin
1,2,3
4
5,6,7,8
TrenchMOS is a trademark of Royal Philips Electronics.
Pinning - SOT96-1, simplified outline and symbol
Description
source (s)
gate (g)
drain (d)
c
c
M3D315
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
Product availability:
Si4420DY in SOT96-1 (SO8).
Si4420DY
N-channel enhancement mode field-effect transistor
Rev. 01 — 28 May 2001
Low on-state resistance
Fast switching
TrenchMOS™ technology.
DC to DC convertors
DC motor control
Lithium-ion battery applications
Notebook PC
Portable equipment applications.
1
technology.
Simplified outline
SOT96-1 (SO8)
1
8
Top view
MBK187
5
4
Symbol
MBB076
g
d
s
Product data

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SI4420DY,518 Summary of contents

Page 1

Si4420DY N-channel enhancement mode field-effect transistor Rev. 01 — 28 May 2001 M3D315 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: Si4420DY in SOT96-1 (SO8). 2. Features Low on-state resistance Fast switching TrenchMOS™ ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 100 P der (%) 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of ambient temperature. ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to ambient th(j-a) 7.1 Transient thermal impedance th(j-amb) = 0.5 (K/W) 0.2 10 0.1 0.05 0.02 1 single pulse 10 -1 ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS I on-state drain current D(on) R ...

Page 6

Philips Semiconductors 0.02 R DSon ( ) 0. º Fig 7. Drain-source on-state resistance as a function of drain current; typical values. 2.5 V GS(th) (V) ...

Page 7

Philips Semiconductors 50 V > DSon º and 150 ...

Page 8

Philips Semiconductors 9. Package outline SO8: plastic small outline package; 8 leads; body width 3 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT ...

Page 9

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20010528 - Product specification; initial version 9397 750 08239 Product data N-channel enhancement mode field-effect transistor Rev. 01 — 28 May 2001 Si4420DY © Philips Electronics ...

Page 10

Philips Semiconductors 11. Data sheet status [1] [2] Data sheet status Product status Objective data Development Preliminary data Qualification Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product ...

Page 11

Philips Semiconductors Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. ...

Page 12

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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