PHP110NQ08T,127 NXP Semiconductors, PHP110NQ08T,127 Datasheet

MOSFET N-CH 75V 75A TO220AB

PHP110NQ08T,127

Manufacturer Part Number
PHP110NQ08T,127
Description
MOSFET N-CH 75V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PHP110NQ08T,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
113.1nC @ 10V
Input Capacitance (ciss) @ Vds
4860pF @ 25V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934058275127
PHP110NQ08T
PHP110NQ08T
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
Low conduction losses due to low
on-state resistance
DC-to-DC convertors
General industrial applications
PHP110NQ08T
N-channel TrenchMOS standard level FET
Rev. 02 — 12 October 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
V
V
see
V
T
see
j
mb
mb
j
GS
DS
GS
≥ 25 °C; T
= 25 °C;
Figure 1
Figure 11
Figure 9
= 25 °C; V
= 25 °C; see
= 60 V; T
= 10 V; I
= 10 V; I
j
D
D
and
and
≤ 175 °C
j
= 25 °C;
GS
= 25 A;
= 25 A;
3
Figure 2
10
= 10 V;
Suitable for standard level gate drive
sources
Motors, lamps and solenoids
Uninterruptible power supplies
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
48.2
7.7
Max
75
75
230
-
9
Unit
V
A
W
nC
mΩ

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PHP110NQ08T,127 Summary of contents

Page 1

PHP110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name Description PHP110NQ08T TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead ...

Page 3

... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage DGR V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg ...

Page 4

... NXP Semiconductors ( Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-mb) junction to mounting base R thermal resistance from th(j-a) junction to ambient 1 Z δ = 0.5 th(j-mb) (K/W) 0.2 − ...

Page 5

... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...

Page 6

... NXP Semiconductors 240 ° (A) 160 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values − (A) min typ −2 10 −3 10 −4 10 −5 10 − Fig 7. Sub-threshold drain current as a function of gate-source voltage PHP110NQ08T_2 Product data sheet 03ap77 ( 5 4 (V) DS Fig 6. Transfer characteristics: drain current as a function of gate-source voltage ...

Page 7

... NXP Semiconductors ° 5 DSon (mΩ Fig 9. Drain-source on-state resistance as a function of drain current; typical values ( ° Fig 11. Gate-source voltage as a function of gate charge; typical values PHP110NQ08T_2 Product data sheet 03ap78 2 1 0.8 0 −60 160 240 I (A) D Fig 10. Normalized drain-source on-state resistance ...

Page 8

... NXP Semiconductors Fig 13. Source current as a function of source-drain voltage; typical values PHP110NQ08T_2 Product data sheet ( 175 ° ° 0.3 0.6 0.9 Rev. 02 — 12 October 2009 PHP110NQ08T N-channel TrenchMOS standard level FET 03ap80 1.2 V (V) SD © NXP B.V. 2009. All rights reserved. ...

Page 9

... NXP Semiconductors 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB DIMENSIONS (mm are the original dimensions) (2) UNIT 4.7 1.40 0.9 1.6 1.3 mm 4.1 1.25 0.6 1.0 1.0 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION ...

Page 10

... PHP110NQ08T_2 20091012 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Typenumber PHP110NQ08T separated from data sheet PHP_PHB110NQ08T-01. PHP_PHB110NQ08T-01 ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...

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