MOSFET N-CH 600V 15A TO-247AD

IXFH15N60

Manufacturer Part NumberIXFH15N60
DescriptionMOSFET N-CH 600V 15A TO-247AD
ManufacturerIXYS
SeriesHiPerFET™
IXFH15N60 datasheet
 


Specifications of IXFH15N60

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs500 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)600V
Current - Continuous Drain (id) @ 25° C15AVgs(th) (max) @ Id4.5V @ 4mA
Gate Charge (qg) @ Vgs170nC @ 10VInput Capacitance (ciss) @ Vds4500pF @ 25V
Power - Max300WMounting TypeThrough Hole
Package / CaseTO-247ADConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.5 Ohms
Drain-source Breakdown Voltage600 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current15 APower Dissipation300 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CVdss, Max, (v)600
Id(cont), Tc=25°c, (a)15Rds(on), Max, Tj=25°c, (?)0.5
Ciss, Typ, (pf)4500Qg, Typ, (nc)151
Trr, Typ, (ns)-Trr, Max, (ns)250
Pd, (w)298Rthjc, Max, (ºc/w)0.42
Package StyleTO-247Lead Free Status / RoHS StatusRequest inventory verification / Request inventory verification
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TM
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
, HDMOS
rr
Symbol
Test Conditions
V
T
= 25°C to 150°C
DSS
J
V
T
= 25°C to 150°C; R
DGR
J
V
Continuous
GS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
AR
C
E
T
= 25°C
AR
C
£ I
, di/dt £ 100 A/ms, V
dv/dt
I
S
DM
£ 150°C, R
= 2 W
T
J
G
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
M
Mounting torque
d
Weight
Symbol
Test Conditions
= 250 mA
V
V
= 0 V, I
DSS
GS
D
V
V
= V
, I
= 4 mA
GS(th)
DS
GS
D
= ±20 V
I
V
, V
= 0
GSS
GS
DC
DS
I
V
= 0.8 • V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 • I
DS(on)
GS
D
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
IXFH/IXFM 15 N60
IXFH/IXFM 20 N60
TM
Family
Maximum Ratings
600
= 1 MW
600
GS
±20
±30
15N60
15
20N60
20
15N60
60
JM
20N60
80
15N60
15
20N60
20
30
£ V
,
5
DD
DSS
300
-55 ... +150
150
-55 ... +150
300
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min.
typ.
max.
600
2.0
T
= 25°C
J
T
= 125°C
J
15N60
D25
20N60
V
I
DSS
D25
600 V
15 A
600 V
20 A
£ 250 ns
t
rr
TO-247 AD (IXFH)
V
V
V
V
A
TO-204 AE (IXFM)
A
A
A
A
A
mJ
D
V/ns
G = Gate,
D = Drain,
S = Source,
TAB = Drain
W
°C
Features
• International standard packages
°C
• Low R
HDMOS
°C
DS (on)
• Rugged polysilicon gate cell structure
°C
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
V
power supplies
• DC choppers
4.5
V
• AC motor control
±100
nA
• Temperature and lighting controls
• Low voltage relays
mA
250
1 mA
Advantages
• Easy to mount with 1 screw (TO-247)
W
0.50
(isolated mounting screw hole)
W
0.35
• Space savings
• High power density
R
DS(on)
0.50 W
0.35 W
(TAB)
G
TM
process
91526E (4/99)
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IXFH15N60 Summary of contents

  • Page 1

    ... DSS DS DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 TM Family Maximum Ratings 600 = 1 MW 600 GS ±20 ±30 15N60 ...

  • Page 2

    ... 25° 125° 25° 125° 25° 125° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 15N60 IXFH 20N60 IXFM 15N60 IXFM 20N60 TO-247 AD (IXFH) Outline 170 nC Dim ...

  • Page 3

    ... V = 10V GS 1.15 1.10 1. 1.00 0.95 0. Amperes D Fig. 5 Drain Current vs. Case Temperature 20N60 20 15 15N60 -50 - Degrees C C © 2000 IXYS All rights reserved V = 10V 15V 100 125 150 IXFH 15N60 IXFH 20N60 IXFM 15N60 IXFM 20N60 Fig. 2 Input Admittance 25° Volts GS Fig. 4 Temperature Dependence of Drain to Source Resistance 2 ...

  • Page 4

    ... C rss Volts CE Fig.10 Transient Thermal Impedance 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved 100 10 1 0.1 100 120 140 0.001 0.01 Pulse Width - Seconds IXFH 15N60 IXFH 20N60 IXFM 15N60 IXFM 20N60 Fig ...