IXFH15N60 IXYS, IXFH15N60 Datasheet
IXFH15N60
Manufacturer Part Number
IXFH15N60
Description
MOSFET N-CH 600V 15A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH20N60.pdf
(4 pages)
Specifications of IXFH15N60
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.5 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.5
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
151
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH15N60
Manufacturer:
IXYS
Quantity:
3 000
Company:
Part Number:
IXFH15N60
Manufacturer:
IXYS
Quantity:
5 510
Company:
Part Number:
IXFH15N60
Manufacturer:
TOS
Quantity:
5 510
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
D
DSS
GS
GSM
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
rr
, HDMOS
, I
D
D
DC
D
= 250 mA
DSS
= 4 mA
, V
= 0.5 • I
G
= 2 W
DS
= 0
D25
TM
GS
= 1 MW
Family
DD
T
T
J
J
£ V
= 25°C
= 125°C
(T
15N60
20N60
DSS
J
= 25°C, unless otherwise specified)
JM
,
TO-204 = 18 g, TO-247 = 6 g
IXFH/IXFM 15 N60
IXFH/IXFM 20 N60
15N60
20N60
15N60
20N60
15N60
20N60
min.
600
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
600
600
±20
±30
300
150
300
15
20
60
80
15
20
30
5
max.
±100
0.50
0.35
250
4.5
1 mA
V/ns
mJ
nA
mA
°C
°C
°C
°C
W
W
W
V
V
V
V
A
A
A
A
A
A
V
V
TO-247 AD (IXFH)
TO-204 AE (IXFM)
G = Gate,
S = Source,
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
• Space savings
• High power density
rated
- easy to drive and to protect
power supplies
(isolated mounting screw hole)
600 V
600 V
V
t
rr
DSS
£ 250 ns
DS (on)
HDMOS
15 A
20 A
D
D = Drain,
TAB = Drain
I
D25
TM
G
process
91526E (4/99)
0.50 W
0.35 W
R
(TAB)
DS(on)
1 - 4
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IXFH15N60 Summary of contents
Page 1
... DSS DS DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 TM Family Maximum Ratings 600 = 1 MW 600 GS ±20 ±30 15N60 ...
Page 2
... 25° 125° 25° 125° 25° 125° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 15N60 IXFH 20N60 IXFM 15N60 IXFM 20N60 TO-247 AD (IXFH) Outline 170 nC Dim ...
Page 3
... V = 10V GS 1.15 1.10 1. 1.00 0.95 0. Amperes D Fig. 5 Drain Current vs. Case Temperature 20N60 20 15 15N60 -50 - Degrees C C © 2000 IXYS All rights reserved V = 10V 15V 100 125 150 IXFH 15N60 IXFH 20N60 IXFM 15N60 IXFM 20N60 Fig. 2 Input Admittance 25° Volts GS Fig. 4 Temperature Dependence of Drain to Source Resistance 2 ...
Page 4
... C rss Volts CE Fig.10 Transient Thermal Impedance 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved 100 10 1 0.1 100 120 140 0.001 0.01 Pulse Width - Seconds IXFH 15N60 IXFH 20N60 IXFM 15N60 IXFM 20N60 Fig ...