IXFH15N60 IXYS, IXFH15N60 Datasheet - Page 2

MOSFET N-CH 600V 15A TO-247AD

IXFH15N60

Manufacturer Part Number
IXFH15N60
Description
MOSFET N-CH 600V 15A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH15N60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.5 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.5
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
151
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH15N60
Manufacturer:
IXYS
Quantity:
3 000
Part Number:
IXFH15N60
Manufacturer:
IXYS
Quantity:
5 510
Part Number:
IXFH15N60
Manufacturer:
TOS
Quantity:
5 510
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
© 2000 IXYS All rights reserved
S
SM
RM
d(on)
d(off)
f
r
rr
fs
SD
oss
thJC
thCK
iss
rss
g(on)
gs
gd
RM
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
F
DS
GS
= I
= 0 V
S
= 10 V; I
V
V
R
V
I
-di/dt = 100 A/ms,
V
, V
F
GS
GS
GS
R
G
= I
= 100 V
= 2 W (External)
GS
S
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
JM
, pulse test
15N60
20N60
15N60
20N60
T
T
T
T
T
T
J
J
J
J
J
J
DSS
DSS
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
(T
(T
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
, I
, I
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
D
= 0.5 • I
= 0.5 • I
4,881,106
4,931,844
D25
D25
min.
min.
11
Characteristic Values
Characteristic Values
5,017,508
5,034,796
4500
typ.
typ.
0.25
420
140
151
10
15
18
20
43
70
40
29
60
1
2
0.42
max.
max.
170
40
60
90
60
40
85
250 ns
400 ns
5,049,961
5,063,307
1.5
15
20
60
80
K/W
K/W
nC
nC
nC
mC
mC
pF
pF
pF
ns
ns
ns
ns
S
A
A
A
A
V
A
A
IXFH 15N60
IXFM 15N60
5,187,117
5,237,481
TO-204 AE (IXFM) Outline
TO-247 AD (IXFH) Outline
Dim. Millimeter
5,486,715
5,381,025
A
B
C
D
E
F
G
H
J
K
L
M
N
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
Min. Max.
38.61 39.12
30.15
10.67 11.17
16.64 17.14
11.18 12.19
25.16 26.66
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
6.40 11.40
1.45
1.52
5.21
3.84
Min.
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
Millimeter
-
- 22.22
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
Max.
BSC
1.60
3.43
5.71
4.19
IXFH 20N60
IXFM 20N60
Min.
1.520 1.540
0.252 0.449
0.057 0.063
0.060 0.135
1.187
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.050
Inches
Min.
Inches
0.177
- 0.875
Max.
Max.
BSC
2 - 4

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