IRFL4105TR International Rectifier, IRFL4105TR Datasheet

MOSFET N-CH 55V 3.7A SOT223

IRFL4105TR

Manufacturer Part Number
IRFL4105TR
Description
MOSFET N-CH 55V 3.7A SOT223
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFL4105TR.pdf (9 pages)

Specifications of IRFL4105TR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 3.7A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRFL4105TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRFL4105TRPBF
Quantity:
9 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRFL4105TRPBF
Quantity:
3 000
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of 1.0W
is possible in a typical surface mount application.
Absolute Maximum Ratings
Thermal Resistance
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
I
I
I
I
P
P
V
E
I
E
dv/dt
T
R
R
D
D
D
DM
AR
J,
D
D
GS
AS
AR
@ T
@ T
@ T
JA
JA
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
@T
@T
T
STG
A
A
A
A
A
= 25°C
= 25°C
= 70°C
= 25°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Parameter
Parameter
GS
GS
GS
@ 10V**
@ 10V*
@ 10V*
G
Typ.
90
50
S
D
HEXFET
-55 to + 150
S O T -22 3
Max.
0.10
± 20
110
5.2
3.7
3.0
1.0
8.3
5.0
2.1
3.7
30
IRFL4105
R
®
DS(on)
Max.
Power MOSFET
V
120
60
I
DSS
D
= 3.7A
= 0.045
= 55V
PD- 91381A
mW/°C
Units
Units
°C/W
V/ns
mJ
mJ
°C
W
W
A
V
A
1
1/14/99

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IRFL4105TR Summary of contents

Page 1

... Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRFL4105 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TO P 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BO TTOM 4. 0µ ° 0.1 ...

Page 4

IRFL4105 ...

Page 5

Q G 10V Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig ...

Page 6

IRFL4105 . Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

Page 7

D.U Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent * V GS www.irf.com Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage ...

Page 8

IRFL4105 Package Outline SOT-223 (TO-261AA) Outline Part Marking Information SOT-223 TIO ...

Page 9

Tape & Reel Information SOT-223 Outline (. (. (. ...

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