MOSFET N-CH 150V 43A D2PAK

IRF3415S

Manufacturer Part NumberIRF3415S
DescriptionMOSFET N-CH 150V 43A D2PAK
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF3415S datasheet
 


Specifications of IRF3415S

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs42 mOhm @ 22A, 10VDrain To Source Voltage (vdss)150V
Current - Continuous Drain (id) @ 25° C43AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs200nC @ 10VInput Capacitance (ciss) @ Vds2400pF @ 25V
Power - Max3.8WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRF3415S  
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Advanced Process Technology
Surface Mount (IRF3415S)
Low-profile through-hole (IRF3415L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
The D
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
2
D
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3415L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Junction-to-Ambient ( PCB Mounted,steady-state)**
JA
IRF3415S/L
HEXFET
D
G
S
This
2
D P ak
Max.
@ 10V
GS
@ 10V
GS
150
200
± 20
590
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
PD - 91509C
®
Power MOSFET
V
= 150V
DSS
R
= 0.042
DS(on)
I
= 43A
D
T O -26 2
Units
43
30
A
3.8
W
W
1.3
W/°C
V
mJ
22
A
20
mJ
5.0
V/ns
°C
Max.
Units
0.75
°C/W
40
5/13/98

IRF3415S Summary of contents

  • Page 1

    ... Advanced Process Technology Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ...

  • Page 2

    ... IRF3415S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

  • Page 3

    ... V DS Fig 2. Typical Output Characteristics 3.0 37A 2.5 2.0 1.5 ° 1.0 0.5 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRF3415S/L VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.5V 4.5V 5.0V 4.5V 20us PULSE WIDTH 175 Drain-to-Source Voltage ( 10V 100 120 140 160 180 ...

  • Page 4

    ... IRF3415S/L 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss C rss 1000 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 T = 175 0.1 0.2 0.6 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED ...

  • Page 5

    ... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case R G 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF3415S D.U. µ d(off ...

  • Page 6

    ... IRF3415S Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 1400 1200 1000 800 600 + 400 200 Starting T , Junction Temperature ( Fig 12c. Maximum Avalanche Energy 12V V GS Fig 13b. Gate Charge Test Circuit ...

  • Page 7

    ... Current Current D.U.T. V Waveform DS Diode Recovery Re-Applied Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS IRF3415S/L Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period V =10V ...

  • Page 8

    ... IRF3415S Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP & 4.5M , 198 TRO L LIN SIO ATSINK & Part Marking Information 2 D Pak TIO 4.69 (.1 85) 4.20 (.1 65) 1 ...

  • Page 9

    ... Package Outline TO-262 Outline Part Marking Information TO-262 IRF3415S/L ...

  • Page 10

    ... IRF3415S/L Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE C TIO N 33 0.00 (1 4 LLIN ILL WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K& ...

  • Page 11

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...