IRF3415S International Rectifier, IRF3415S Datasheet
IRF3415S
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IRF3415S Summary of contents
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... Advanced Process Technology Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ...
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... IRF3415S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... V DS Fig 2. Typical Output Characteristics 3.0 37A 2.5 2.0 1.5 ° 1.0 0.5 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRF3415S/L VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.5V 4.5V 5.0V 4.5V 20us PULSE WIDTH 175 Drain-to-Source Voltage ( 10V 100 120 140 160 180 ...
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... IRF3415S/L 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss C rss 1000 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 T = 175 0.1 0.2 0.6 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case R G 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF3415S D.U. µ d(off ...
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... IRF3415S Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 1400 1200 1000 800 600 + 400 200 Starting T , Junction Temperature ( Fig 12c. Maximum Avalanche Energy 12V V GS Fig 13b. Gate Charge Test Circuit ...
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... Current Current D.U.T. V Waveform DS Diode Recovery Re-Applied Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS IRF3415S/L Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period V =10V ...
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... IRF3415S Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP & 4.5M , 198 TRO L LIN SIO ATSINK & Part Marking Information 2 D Pak TIO 4.69 (.1 85) 4.20 (.1 65) 1 ...
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... Package Outline TO-262 Outline Part Marking Information TO-262 IRF3415S/L ...
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... IRF3415S/L Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE C TIO N 33 0.00 (1 4 LLIN ILL WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K& ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...