IRF3415S International Rectifier, IRF3415S Datasheet - Page 2

MOSFET N-CH 150V 43A D2PAK

IRF3415S

Manufacturer Part Number
IRF3415S
Description
MOSFET N-CH 150V 43A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF3415S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
42 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 25V
Power - Max
3.8W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3415S

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IRF3415S/L
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
I
I
L
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
DSS
GSS
S
on
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
d(on)
d(off)
f
SM
rr
r
Notes:
S
V
fs
(BR)DSS
DS(on)
GS(th)
g
gd
iss
oss
rss
SD
gs
rr
(BR)DSS
For recommended soldering techniques refer to application note #AN-994.
Repetitive rating; pulse width limited by
R
T
max. junction temperature. ( See fig. 11 )
I
Starting T
SD
J
G
= 25 , I
175°C
/ T
22A, di/dt
J
Drain-to-Source Leakage Current
Internal Source Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
J
= 25°C, L = 2.4mH
AS
= 22A. (See Figure 12)
820A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
19
Uses IRF3415 data and test conditions
Pulse width
Intrinsic turn-on time is negligible (turn-on is dominated by L
2400 –––
0.17 –––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
640
340
–––
–––
–––
260
––– 0.042
–––
2.2
12
71
69
7.5
55
100
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
390
4.0
1.3
3.3
17
25
98
150
43
300µs; duty cycle
V/°C
µA
nA
ns
nH
nC
µC
pF
ns
V
V
V
S
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
R
R
Between lead,
and center of die contact
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
I
V
integral reverse
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 22A
= 22A
= 25°C, I
= 25°C, I
= 2.5
= 3.3
= V
= 50V, I
= 120V, V
= 0V, I
= 10V, I
= 150V, V
= 20V
= -20V
= 120V
= 10V, See Fig. 6 and 13
= 0V
= 25V
= 75V
GS
2%.
, I
See Fig. 10
D
F
S
D
D
D
= 22A
= 250µA
= 22A, V
Conditions
Conditions
= 250µA
= 22A
= 22A
GS
GS
= 0V, T
= 0V
D
GS
= 1mA
J
= 0V
G
= 150°C
S
+L
D
D
S
)

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