IRF3415S International Rectifier, IRF3415S Datasheet - Page 4

• Manufacturer Part Number: IRF3415S
• Description: MOSFET N-CH 150V 43A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3415S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3415S

IRF3415S/L
1000
100
6000
5000
4000
3000
2000
1000
0.1
10
1
0.2
0
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
T = 175 C
J
V
V
SD
DS
0.6
Drain-to-Source Voltage
Forward Voltage
,Source-to-Drain Voltage (V)
o
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
C iss
C oss
C rss
=
=
=
=
T = 25 C
J
0V,
C
C
C
gs
gd
ds
1.0
+ C
+ C
10
o
f = 1MHz
gd ,
gd
C
ds
1.4
V
GS
SHORTED
= 0 V
1.8
100
1000
100
20
16
12
10
8
4
0
1
Fig 6. Typical Gate Charge Vs.
0
Fig 8. Maximum Safe Operating Area
1
I =
D
T
T
Single Pulse
C
J
= 25 C
= 175 C
22A
OPERATION IN THIS AREA LIMITED
V
Gate-to-Source Voltage
DS
40
Q , Total Gate Charge (nC)
o
o
G
, Drain-to-Source Voltage (V)
10
V
V
V
DS
DS
DS
80
BY R
= 120V
= 75V
= 30V
DS(on)
FOR TEST CIRCUIT
120
SEE FIGURE
100
10us
100us
1ms
10ms
160
13
1000
200