IRF3415S International Rectifier, IRF3415S Datasheet - Page 7

• Manufacturer Part Number: IRF3415S
• Description: MOSFET N-CH 150V 43A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3415S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3415S

Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
G
D.U.T
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
= 5V for Logic Level Devices
SD
DS
Fig 14. For N-Channel HEXFETS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
Ground Plane
di/dt
Low Stray Inductance
Low Leakage Inductance
Current Transformer
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
IRF3415S/L
+
-
V
DD
*