IRFP150N International Rectifier, IRFP150N Datasheet

MOSFET N-CH 100V 42A TO-247AC

IRFP150N

Manufacturer Part Number
IRFP150N
Description
MOSFET N-CH 100V 42A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFP150N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 23A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFP150N
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
R
R
R
I
I
I
P
V
E
I
E
dv/dt
T
T
D
D
DM
AR
STG
D
GS
AS
AR
J
CS
JA
@ T
@ T
JC
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Power Dissipation
Peak Diode Recovery dv/dt
Junction-to-Case
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.24
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
S
D
Max.
TO-247AC
140
160
± 20
420
1.1
5.0
42
30
22
16
IRFP150N
®
R
Power MOSFET
DS(on)
V
Max.
0.95
–––
40
DSS
I
PD - 91503D
D
= 42A
= 0.036W
= 100V
Units
Units
07/15/02
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

Related parts for IRFP150N

IRFP150N Summary of contents

Page 1

... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com HEXFET 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.24 ––– 91503D IRFP150N ® Power MOSFET V = 100V DSS R = 0.036W DS(on 42A D TO-247AC Max. Units 140 160 W 1.1 W/° ...

Page 2

... IRFP150N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM 4.5V 4.5V 10 20us PULSE WIDTH T = 175 0 Drain-to-Source Voltage (V) DS Fig 2. Typical Output Characteristics 3.0 36A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 180 T , Junction Temperature ( C) J Fig 4. Normalized On-Resistance Vs. Temperature IRFP150N o 10 100 V = 10V ...

Page 4

... IRFP150N 3500 iss 3000 rss oss ds 2500 C iss 2000 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 10 1 0.1 0.2 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 1MHz ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRFP150N D.U. 10V Pulse Width £ 1 µs Duty Factor £ 0 d(on) r ...

Page 6

... IRFP150N 20V .01 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 1000 800 D R IVE R 600 + 400 200 12V Fig 13b. Gate Charge Test Circuit TOP BOTTOM 50 75 100 125 Starting T , Junction Temperature ( C) Starting Tj, Junction Temperature (° ...

Page 7

... Driver same type as D.U.T. · I controlled by Duty Factor "D" SD · D.U.T. - Device Under Test Period P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple for Logic Level Devices Fig 14. For N-Channel HEXFETS - + + P. Period * V =10V IRFP150N 7 ...

Page 8

... IRFP150N Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 15.90 (.626) 15.30 (.602 20.30 (.800) 19.70 (.775 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 3.40 (.133) 2X 3.00 (.118) Part Marking Information TO-247AC 3.65 (.143) 3.55 (.140) 0.25 (.010) ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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