IRFP150N International Rectifier, IRFP150N Datasheet - Page 2

• Manufacturer Part Number: IRFP150N
• Description: MOSFET N-CH 100V 42A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP150N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP150N

IRFP150N
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
L
DSS
GSS
d(on)
d(off)
S
SM
rr
on
r
f
V
fs
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
2
g
gs
gd
rr
Repetitive rating; pulse width limited by
Starting T
max. junction temperature. ( See fig. 11 )
(BR)DSS
R
I
T
SD
G
J
= 25W , I
175°C
22A, di/dt
/ T
J
J
= 25°C, L = 1.7mH
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
AS
= 22A. (See Figure 12)
180A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Uses IRF1310N data and test conditions.
Pulse width
Uses IRF1310N data and test conditions
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
–––
–––
–––
–––
–––
14
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
1900 –––
0.11 –––
–––
––– 0.036
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
450
230
–––
–––
–––
180
1.2
5.0
13
11
56
45
40
–––
–––
–––
–––
–––
250
100
110
–––
–––
–––
–––
–––
270
140
300µs; duty cycle
4.0
1.3
1.8
25
15
58
42
V/°C
nH
µC
µA
nA
nC
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 22A
= 22A
= 25°C, I
= 25°C, I
= 3.6W
= 2.9W , See Fig. 10
= V
= 25V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 50V
= 0V
2%.
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
GS
Conditions
=23A, V
= 22A
= 250µA
= 23A
= 22A
GS
= 0V, T
= 0V
D
GS
= 1mA
G
J
www.irf.com
= 0V
= 150°C
G
S
+L
D
S
D
)
S
D