IRFP150N International Rectifier, IRFP150N Datasheet - Page 4

• Manufacturer Part Number: IRFP150N
• Description: MOSFET N-CH 100V 42A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP150N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP150N

IRFP150N
4
1000
3500
3000
2500
2000
1500
1000
100
500
0.1
10
1
0
Fig 7. Typical Source-Drain Diode
0.2
Fig 5. Typical Capacitance Vs.
1
Drain-to-Source Voltage
0.4
V
V
SD
DS
Forward Voltage
V
C
C
C
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.6
GS
iss
rss
oss
C
C
C
iss
oss
rss
=
=
=
=
0V,
C
C
C
0.8
gs
gd
ds
+ C
+ C
10
1.0
f = 1MHz
gd ,
gd
C
ds
1.2
V
SHORTED
GS
1.4
= 0 V
1.6
100
1000
100
10
20
16
12
1
8
4
0
Fig 8. Maximum Safe Operating Area
1
0
T
T
Single Pulse
I =
C
J
D
Fig 6. Typical Gate Charge Vs.
= 25 C
= 175 C
OPERATION IN THIS AREA LIMITED
22A
V
Gate-to-Source Voltage
20
DS
o
Q , Total Gate Charge (nC)
o
G
, Drain-to-Source Voltage (V)
10
40
V
V
V
BY R
DS
DS
DS
= 80V
= 50V
= 20V
60
DS(on)
FOR TEST CIRCUIT
SEE FIGURE
100
80
10us
100us
1ms
10ms
www.irf.com
100
13
1000
120