IRF3710STRR International Rectifier, IRF3710STRR Datasheet

IRF3710STRR

Manufacturer Part Number

IRF3710STRR

Description

MOSFET N-CH 100V 57A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF3710STRR.pdf (10 pages)

Specifications of IRF3710STRR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

23 mOhm @ 28A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

57A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

130nC @ 10V

Input Capacitance (ciss) @ Vds

3130pF @ 25V

Power - Max

200W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF3710STRR

Manufacturer:

NDK

Quantity:

1 600

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF3710STRRPBF

Manufacturer:

Quantity:

15 000

Current page: 1 of 10
Download datasheet (297Kb)

Description

Absolute Maximum Ratings

Thermal Resistance

Advanced HEXFET

advanced processing techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and reliable device for use in

a wide variety of applications.

The D

sizes up to HEX-4. It provides the highest power capability and the lowest

possible on-resistance in any existing surface mount package. The D

suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF3710L) is available for low-profile applications.

www.irf.com

dv/dt

STG

θJC

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Pak is a surface mount power package capable of accommodating die

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient

Power MOSFETs from International Rectifier utilize

Parameter

(PCB Mounted,steady-state)**

‡

ƒ‡

@ 10V

‡

Pak is

Typ.

300 (1.6mm from case )

–––

HEXFET

-55 to + 175

Max.

IRF3710S

180

200

± 20

1.3

5.8

IRF3710S

IRF3710L

Pak

Power MOSFET

DS(on)

Max.

0.75

DSS

= 57A

PD - 94201C

= 100V

= 23mΩ

IRF3710L

TO-262

Units

W/°C

°C/W

V/ns

°C

Related parts for IRF3710STRR

IRF3710STRR Summary of contents

Page 1

... Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 16V 10V 7.0V 6.0V 5.0V 100 4.5V 4.0V BOTTOM 3. 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100. ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 10 ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 550 15V 440 DRIVER + 330 ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ QSP V8UÃPQUDPI6G 6TT@H7G` `@6SÃÃ2Ã! GPUÃ8P @ X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P @ Q6SUÃIVH7@S 6U@Ã8P @ `@6SÃÃ2Ã! ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å 5 www.irf.com Q6SUÃIVH7@S DIU@SI6UDPI6 S@8UDAD@S PBP 96U@Ã8P9@ `@6SÃ&Ã2Ã ((& 6TT@H7 ` X@@FÃ ( ...

Page 10

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE ...

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