IRF530NS International Rectifier, IRF530NS Datasheet

MOSFET N-CH 100V 17A D2PAK

IRF530NS

Manufacturer Part Number
IRF530NS
Description
MOSFET N-CH 100V 17A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF530NS.pdf (11 pages)

Specifications of IRF530NS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
37nC @ 10V
Input Capacitance (ciss) @ Vds
920pF @ 25V
Power - Max
3.8W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF530NS

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Price
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l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
Description
www.irf.com
I
I
I
P
P
V
I
E
dv/dt
T
T
R
R
D
D
DM
AR
2
J
STG
D
D
GS
AR
θJC
θJA
Pak is suitable for high current applications because of its low internal
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
@T
2
Pak is a surface mount power package capable of accommodating
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
®
Power MOSFETs from International Rectifier
Parameter
Parameter

‡
ƒ‡
GS
GS

@ 10V
@ 10V
‡
‡
G
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
-55 to + 175
S
D
IRF530NS
Max.
D
0.47
± 20
3.8
9.0
7.0
7.4
17
12
60
70
2
Pak
®
R
Power MOSFET
IRF530NS
V
IRF530NL
DS(on)
Max.
2.15
40
DSS
I
D
= 17A
IRF530NL
PD - 91352B
= 100V
TO-262
= 90mΩ
Units
Units
°C/W
W/°C
V/ns
mJ
°C
W
W
A
V
A
1

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IRF530NS Summary of contents

Page 1

... Typ 91352B IRF530NS IRF530NL ® HEXFET Power MOSFET 100V DSS R = 90mΩ DS(on 17A Pak TO-262 IRF530NS IRF530NL Max. Units 3 0.47 W/°C ± 9.0 A 7.0 mJ 7.4 V/ns - 175 °C Max. Units ––– ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° ...

Page 4

1MHz iss rss oss ds gd 1200 C iss 800 C oss 400 C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 SINGLE PULSE 0.02 0.1 (THERMAL RESPONSE) ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 200 160 DRIVER 120 + ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

www.irf.com ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information www.irf.com IGBT 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR 9 ...

Page 10

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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