IRF7807D2 International Rectifier, IRF7807D2 Datasheet

MOSFET N-CH 30V 8.3A 8-SOIC

IRF7807D2

Manufacturer Part Number
IRF7807D2
Description
MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7807D2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7807D2TRPBF
Manufacturer:
IR
Quantity:
20 000
• Co-Pack N-channel HEXFET Power MOSFET
• Ideal for Synchronous Rectifiers in DC-DC
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
Description
The FETKY
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. HEXFET power
MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combining this technology with International Rectifier’s
low forward drop Schottky rectifiers results in an extremely
efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Thermal Resistance
Absolute Maximum Ratings
www.irf.com
Parameter
Maximum Junction-to-Ambient
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
Pulsed Drain Current
Power Dissipation
Schottky and Body Diode
Average ForwardCurrent
Junction & Storage Temperature Range
and Schottky Diode
Converters up to 5A Output
GS
family of Co-Pack HEXFET
4.5V)
25°C
70°C
25°C
70°C
70°C
25°C
MOSFETs
Symbol
T
I
F
R
J
V
V
, T
I
P
I
(AV)
DM
FETKY™ MOSFET / SCHOTTKY DIODE
DS
GS
D
JA
D
STG
SO-8
Device Features (Max Values)
–55 to 150
Max.
Max.
±12
8.3
6.6
2.5
1.6
3.7
2.3
50
V
R
Q
Q
Q
30
66
DS
DS
g
SW
oss
IRF7807D2
(on)
A/S
A/S
A/S
G
IRF7807D2
25m
5.2nC
21.6nC
14nC
30V
1
2
3
4
Top View
PD- 93762
Units
Units
°C/W
8
7
6
5
°C
A
W
V
A
K/D
K/D
K/D
K/D
D
1
11/8/99

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IRF7807D2 Summary of contents

Page 1

... DM 25° 70°C 25°C I (AV) F 70° STG R JA PD- 93762 IRF7807D2 Top View Device Features (Max Values) IRF7807D2 V 30V DS R (on) 25m DS Q 14nC g Q 5.2nC SW Q 21.6nC oss Max. Units 30 V ±12 8.3 6 2.5 W 1.6 3.7 A 2.3 –55 to 150 ° ...

Page 2

... IRF7807D2 Electrical Characteristics Parameter Drain-to-Source V (BR)DSS Breakdown Voltage* Static Drain-Source R (on Resistance* Gate Threshold Voltage* V (th) GS Drain-Source Leakage I DSS Current* Gate-Source Leakage I GSS Current* Total Gate Charge Q gsync Synch FET* Total Gate Charge Q gcont Control FET* Pre-Vth Q gs1 Gate-Source Charge Post-Vth ...

Page 3

... Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 70 TOP 60 50 BOTTOM 0. 0 0.8 1 Fig 4. Typical Reverse Output Characteristics IRF7807D2 VGS 4.5V 3.5V 3.0V 2.5V 380µs PULSE WIDTH Tj = 150°C 1 VGS 4.5V 3.5V 3.0V 2.5V 2.0V O.OV 380µS PULSE WIDTH Tj = 150°C ...

Page 4

... IRF7807D2 2000 1MHz iss rss 1600 oss ds gd 1200 C iss C oss 800 400 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 2 7. 4.5V 1.5 1.0 0.5 -60 -40 - Junction Temperature (°C ) Fig 7. Normalized On-Resistance Vs. Temperature 7.0A C SHORTED 16V 100 0 Fig 6. Typical Gate Charge Vs. ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 1 0.1 0.001 0.01 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (MOSFET) www.irf.com 0.024 0.022 0.020 0.018 0.016 0 8.0 10.0 Fig 10. On-Resistance Vs. Drain Current 0 Rectangular Pulse Duration (sec) 1 IRF7807D2 VGS = 4.5V VGS = 10V Drain Current ( Notes: 1. Duty factor Peak ...

Page 6

... IRF7807D2 Mosfet, Body Diode & Schottky Diode Characteristics 100 Tj = 125° 25° 0.1 0.0 0.2 0.4 0.6 0.8 Forward Voltage Drop - Fig Typical Forward Voltage Drop Characteristics 6 100 Tj = 150°C 10 125°C 100°C 1 75°C 0.1 50°C 25°C 0.01 0.001 ...

Page 7

... SO-8 Package Details Part Marking www.irf.com IRF7807D2 7 ...

Page 8

... IRF7807D2 Tape and Reel . . ( & -48 1 & -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 838 4630 IR TAIWAN:16 Fl ...

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