IRF7807TR International Rectifier, IRF7807TR Datasheet

MOSFET N-CH 30V 8.3A 8-SOIC

IRF7807TR

Manufacturer Part Number
IRF7807TR
Description
MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7807TR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
Description
These new devices employ advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduced conduction and switching losses make them
ideal for high efficiency DC-DC Converters that power
the latest generation of mobile microprocessors.
A pair of IRF7807 devices provides the best cost/
performance solution for system voltages, such as 3.3V
and 5V.
Absolute Maximum Ratings
Thermal Resistance
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
Pulsed Drain Current
Power Dissipation
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
Parameter
Maximum Junction-to-Ambientƒ
www.irf.com
GS
4.5V)
25°C
70°C
25°C
70°C
Symbol
T
HEXFET
J
R
V
V
, T
I
P
I
I
DM
I
SM
DS
GS
D
S
D
JA
STG
®
Chip-Set for DC-DC Converters
IRF7807
IRF7807/IRF7807A
2.5
8.3
6.6
SO-8
66
66
Vds
Rds(on)
Qg
Qsw
Qoss
–55 to 150
Device Features
Max.
±12
2.5
1.6
30
50
IRF7807 IRF7807A
16.8nC
5.2nC
25m
17nC
IRF7807A
30V
2.5
8.3
6.6
66
66
G
S
S
S
16.8nC
25m
1
2
3
4
17nC
T o p V ie w
30V
PD – 91747C
Units
Units
°C/W
°C
W
V
A
A
8
7
6
5
D
D
D
D
A
10/10/00
1

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IRF7807TR Summary of contents

Page 1

N Channel Application Specific MOSFETs • Ideal for Mobile DC-DC Converters • Low Conduction Losses • Low Switching Losses Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. ...

Page 2

IRF7807/IRF7807A Electrical Characteristics Parameter Drain-to-Source V (BR)DSS Breakdown Voltage* Static Drain-Source R (on Resistance* Gate Threshold Voltage* V (th) GS Drain-Source Leakage I DSS Current* Gate-Source Leakage I GSS Current* Total Gate Charge Pre-Vth Q gs1 ...

Page 3

Power MOSFET Selection for DC/DC Converters Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control ...

Page 4

IRF7807/IRF7807A For the synchronous MOSFET Q2, R portant characteristic; however, once again the impor- tance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off ...

Page 5

IRF7807 Figure 5. Normalized On-Resistance vs. Temperature Figure 7. Typical Gate Charge vs. Gate-to-Source Voltage Figure 9. Typical Rds(on) vs. Gate-to-Source Voltage www.irf.com IRF7807/IRF7807A Typical Characteristics Figure 6. Normalized On-Resistance vs. Temperature Figure 8. Typical Gate Charge vs. Gate-to-Source Voltage ...

Page 6

IRF7807/IRF7807A IRF7807 10 ° 150 0.1 0.4 0.5 0.6 0.7 V ,Source-to-Drain Voltage (V) SD Figure 11. Typical Source-Drain Diode Forward Voltage 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE ...

Page 7

Package Outline SO-8 Outline Part Marking Information SO-8 www.irf.com IRF7807/IRF7807A 7 ...

Page 8

IRF7807/IRF7807A Tape & Reel Information SO-8 Dimensions are shown in millimeters (inches . . ...

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