IRF7809 International Rectifier, IRF7809 Datasheet

MOSFET N-CH 30V 17.6A 8-SOIC

IRF7809

Manufacturer Part Number
IRF7809
Description
MOSFET N-CH 30V 17.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7809

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
17.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
86nC @ 5V
Input Capacitance (ciss) @ Vds
7300pF @ 16V
Power - Max
3.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Absolute Maximum Ratings
Thermal Resistance
www.irf.com
• Ideal for CPU Core DC-DC Converters
• New CopperStrap
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high
Description
These new devices employ advanced HEXFET
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make them ideal for
high efficiency DC-DC converters that power the latest
generation of mobile microprocessors.
The IRF7809/IRF7811 employs a new CopperStrap
interconnect technology pioneered by International
Rectifier to dramatically improve the electrial & thermal
resistance contribution of the package. The new
CopperStrap SO-8 power MOSFETs are capable of
current ratings over 17A and power dissipation of 3.5W
@ 25 C ambient conditions, thereby reducing the need
for paralleled devices, improving efficiency and
reliability and reducing board space.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
Pulsed Drain Current
Power Dissipation
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
N-Channel Application-Specific MOSFETs
Electrical and Thermal Resistance
current applications
GS
4.5V)
TM
Interconnect for Lower
T
T
T
T
A
A
L
L
= 25°C
= 90°C
= 25°C
= 90°C
®
Symbol
T
Power
J
R
R
V
V
, T
I
P
I
HEXFET
I
DM
I
SM
DS
GS
D
S
D
JA
JL
STG
TM
®
IRF7809
V
R
Q
Q
Q
Chipset for DC-DC Converters
17.6
16.3
DS
DS
G
100
sw
oss
IRF7809/IRF7811
30
2.5
50
SO-8
IRF7809/IRF7811
(on)
–55 to 150
±12
3.5
3.0
Max.
35
20
Provisional Datasheet
DEVICE RATINGS
IRF7809
7.5 m
77.5 nC
23.9 nC
30 nC
30V
IRF7811
G
100
S
S
S
2.5
28
14
50
13
1
2
3
4
T o p V ie w
IRF7811
11 m
23 nC
31 nC
7 nC
28V
PD - 93812
PD - 93813
Units
Units
°C/W
°C/W
8
7
6
5
°C
W
V
A
A
1/19/00
D
D
D
D
A
A
1

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IRF7809 Summary of contents

Page 1

... DC-DC converters that power the latest generation of mobile microprocessors. The IRF7809/IRF7811 employs a new CopperStrap interconnect technology pioneered by International Rectifier to dramatically improve the electrial & thermal resistance contribution of the package. The new CopperStrap SO-8 power MOSFETs are capable of current ratings over 17A and power dissipation of 3 ...

Page 2

... Charge (with Parallel Schottky) Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q * Devices are 100% tested to these parameters. 2 IRF7809 IRF7811 Min Typ Max Min Typ Max Units 30 – ...

Page 3

... SO-8 Package Outline Part Marking Information www.irf.com IRF7809/IRF7811 3 ...

Page 4

... IRF7809/IRF7811 SO-8 Tape & Reel Information Dimensions are shown in millimeters (inches . . ( & LIN -48 1 & -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR JAPAN: K&H Bldg., 2F, 3-30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171-0021 Japan Tel 3983 0086 IR SOUTHEAST ASIA:1 Kim Seng Promenade,Great World City West Tower, 13-11,Singapore 237994 Tel:65 838 4630 IR TAIWAN : 16F, Suite B, 319, Sec ...

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