IRFZ44NL International Rectifier, IRFZ44NL Datasheet

MOSFET N-CH 55V 49A TO-262

IRFZ44NL

Manufacturer Part Number
IRFZ44NL
Description
MOSFET N-CH 55V 49A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFZ44NL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
49A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1470pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFZ44NL

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFZ44NL
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFZ44NL
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFZ44NLPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
l
l
l
l
l
l
Absolute Maximum Ratings
www.irf.com
Description
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ44NL) is available for low-
profile applications.
Thermal Resistance
P
I
I
I
P
V
I
E
dv/dt
T
T
R
R
D
D
AR
DM
D
GS
STG
D
AR
J
@ T
@ T
JC
JA
@T
Advanced Process Technology
Surface Mount (IRFZ44NS)
Low-profile through-hole (IRFZ44NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
2
A
Pak is a surface mount power package capable of
C
C
C
= 25°C
= 25°C
= 100°C
= 25°C
®
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient
Power MOSFETs from International
Parameter
Parameter

2

Pak is suitable
GS
GS
ƒ

@ 10V
@ 10V
G
300 (1.6mm from case )
Typ.
–––
–––
HEXFET
-55 to + 175
D
S
Max.
0.63
160
± 20
3.8
9.4
5.0
49
35
94
25
IRFZ44NS
IRFZ44NL
®
R
D P ak
2
DS(on)
Power MOSFET
Max.
V
1.5
40
DSS
I
D
= 49A
= 0.0175
= 55V
PD - 94153
T O -26 2
03/13/01
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
W
A
V
A
1

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IRFZ44NL Summary of contents

Page 1

... The D for high current applications because of its low internal connection resistance and can dissipate typical surface mount application. The through-hole version (IRFZ44NL) is available for low- profile applications. Absolute Maximum Ratings Parameter 25° ...

Page 2

... IRFZ44NS/IRFZ44NL Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... ° 0 rain-to-S ource V oltage ( Fig 1. Typical Output Characteristics ° ° µ te-to-S ource Vo ltag e ( Fig 3. Typical Transfer Characteristics www.irf.com IRFZ44NS/IRFZ44NL TOP BOTTOM 4. 0.1 Fig 2. Typical Output Characteristics 2 2.0 1.5 1.0 0 0.0 A -60 -40 - Fig 4. Normalized On-Resistance VGS 15V 10V 8.0V 7 ...

Page 4

... IRFZ44NS/IRFZ44NL iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° ° 0.5 1.0 1.5 2 ource-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage Fig 6. Typical Gate Charge Vs ing lse 2.5 3.0 Fig 8. Maximum Safe Operating Area = FIG ...

Page 5

... D = 0.50 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFZ44NS/IRFZ44NL R Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 10% 150 175 V ° d(on) Fig 10b. Switching Time Waveforms Notes: 1 ...

Page 6

... IRFZ44NS/IRFZ44NL V DS D.U. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 0. (BR)DSS Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit TTO tarting unc tion T em perature (° Vs. Drain Current Current Regulator Same Type as D ...

Page 7

... Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFETS www.irf.com IRFZ44NS/IRFZ44NL Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane ƒ Low Leakage Inductance Current Transformer - „ - dv/dt controlled Driver same type as D ...

Page 8

... IRFZ44NS/IRFZ44NL 2 D Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP & 4.5M , 198 TRO L LIN SIO ATSINK & Part Marking Information 2 D Pak TIO 4.69 (.1 85) 4.20 (.1 65) 1 ...

Page 9

... Package Outline TO-262 Outline Part Marking Information TO-262 www.irf.com IRFZ44NS/IRFZ44NL 9 ...

Page 10

... IRFZ44NS/IRFZ44NL Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE C TIO N 33 0.00 (1 4 LLIN ILL WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 (. (. . . . . .10 (. .90 (. 13.50 (.532 ) 12.80 (.504 ) Data and specifications subject to change without notice. ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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