IRFZ48NS International Rectifier, IRFZ48NS Datasheet
IRFZ48NS
Specifications of IRFZ48NS
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IRFZ48NS Summary of contents
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... Advanced Process Technology l l Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL 175°C Operating Temperature Fast Switching l Fully Avalanche Rated l Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast ...
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... IRFZ48NS/IRFZ48NL Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... V , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° 175 C 100 20µs PULSE WIDTH Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com IRFZ48NS/IRFZ48NL 1000 TOP BOTTOM 100 10 ° 1 0.1 10 100 Fig 2. Typical Output Characteristics 2 2.0 ° J 1.5 1.0 0.5 = 25V 0.0 ...
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... IRFZ48NS/IRFZ48NL 3500 1MHz iss 3000 rss oss ds gd 2500 C iss 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° 0.1 0.2 0.7 1.2 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...
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... Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFZ48NS/IRFZ48NL Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b ...
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... IRFZ48NS/IRFZ48NL 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 360 15 V 300 240 + 180 120 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy 12V V Fig 13b. Gate Charge Test Circuit I D TOP ...
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... Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** Fig 14. For N-channel www.irf.com IRFZ48NS/IRFZ48NL Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance Ground Plane ƒ Low Leakage Inductance Current Transformer - - dv/dt controlled controlled by Duty Factor " ...
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... IRFZ48NS/IRFZ48NL 2 D Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP & 4.5M , 198 TRO L LIN SIO ATSINK & Part Marking Information 2 D Pak TIO 4.69 (.1 85) 4.20 (.1 65) 1 ...
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... Package Outline TO-262 Outline Part Marking Information TO-262 www.irf.com IRFZ48NS/IRFZ48NL 9 ...
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... IRFZ48NS/IRFZ48NL Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE C TIO N 33 0.00 (1 4 LLIN ILL WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 (. (. . . . . .10 (. .90 (. 13.50 (.532 ) 12.80 (.504 ) Data and specifications subject to change without notice. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...