IRFZ48NSTRR International Rectifier, IRFZ48NSTRR Datasheet

IRFZ48NSTRR

Manufacturer Part Number

IRFZ48NSTRR

Description

MOSFET N-CH 55V 64A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFZ48NS.pdf (11 pages)

Specifications of IRFZ48NSTRR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

14 mOhm @ 32A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

64A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

81nC @ 10V

Input Capacitance (ciss) @ Vds

1970pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

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Absolute Maximum Ratings

Description

Thermal Resistance

Advanced HEXFET

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-resistance

in any existing surface mount package. The D

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0W

in a typical surface mount application.

The through-hole version (IRFZ48NL) is available for low-

profile applications.

www.irf.com

dv/dt

STG

qJA

qJC

@ T

Advanced Process Technology

Surface Mount (IRFZ48NS)

Low-profile through-hole (IRFZ48NL)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Power MOSFETs from

Parameter

Pak is

@ 10V

300 (1.6mm from case )

Typ.

–––

HEXFET

-55 to + 175

Max.

0.83

210

130

± 20

3.8

5.0

IRFZ48NS

IRFZ48NL

D P ak

Power MOSFET

DS(on)

Max.

1.15

DSS

PD - 9.1408B

= 64A

= 0.014

= 55V

T O -26 2

03/12/01

Units

W/°C

°C/W

V/ns

°C

Related parts for IRFZ48NSTRR

IRFZ48NSTRR Summary of contents

Page 1

... Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRFZ48NS/IRFZ48NL Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS ...

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IRFZ48NSTRR International Rectifier, IRFZ48NSTRR Datasheet

IRFZ48NSTRR

Specifications of IRFZ48NSTRR

Related parts for IRFZ48NSTRR

IRFZ48NSTRR Summary of contents

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