IRL1004 International Rectifier, IRL1004 Datasheet

MOSFET N-CH 40V 130A TO-220AB

IRL1004

Manufacturer Part Number
IRL1004
Description
MOSFET N-CH 40V 130A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL1004

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.5 mOhm @ 78A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 4.5V
Input Capacitance (ciss) @ Vds
5330pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL1004

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL1004
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRL1004L
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL1004PBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IRL1004PBF
Quantity:
1 000
Part Number:
IRL1004S
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRL1004S
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL1004STRLPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRL1004STRRPBF
Manufacturer:
IR
Quantity:
20 000
Description
Fifth Generation HEXFET
International Rectifier utilize advanced processing techniques
to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Thermal Resistance
www.irf.com
Absolute Maximum Ratings
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
AR
DM
GS
AS
STG
D
AR
J
qJA
@ T
@ T
JC
CS
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
power MOSFETs from
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
0.50
–––
–––
300 (1.6mm from case)
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
S
D
Max.
130
92
TO-220AB
520
200
± 16
700
1.3
5.0
78
20
Max.
0.75
®
–––
R
62
IRL1004
DS(on)
Power MOSFET
V
I
D
DSS
PD - 91702B
= 130A
= 0.0065
= 40V
Units
°C/W
Units
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
1
11/29/99

Related parts for IRL1004

IRL1004 Summary of contents

Page 1

... TO-220AB Max. @ 10V 130 GS @ 10V 92 GS 520 200 ± 16 700 - 175 300 (1.6mm from case) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– 91702B IRL1004 ® Power MOSFET V = 40V DSS R = 0.0065 DS(on 130A D Units A W 1.3 W/° ...

Page 2

... IRL1004 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 2.0 ° J 1.5 1.0 0.5 = 50V 25 0.0 -60 -40 -20 0 7.0 8.0 9.0 Fig 4. Normalized On-Resistance IRL1004 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 2.7V 2.7V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 130A ...

Page 4

... IRL1004 10000 1MHz iss rss 8000 oss iss 6000 C oss 4000 2000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 10 ° 0.1 0.0 0.5 1.0 1.5 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R G 4.5V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRL1004 D.U. µ d(off ...

Page 6

... IRL1004 V DS D.U. 4 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 L 1800 1500 + 1200 0.01 900 600 300 V (BR)DSS 0 25 Starting T , Junction Temperature ( Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. ...

Page 7

... Ground Plane Low Leakage Inductance Current Transformer - - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® Power MOSFETs IRL1004 + =10V ...

Page 8

... IRL1004 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415 ) 10.29 (.405 ) 2.87 (.113 ) 2.62 (.103 ) 15.24 (.600 ) 14.84 (.584 ) 1 14 .09 (. .47 (. .40 (. .15 (. .54 (. ING & TOL 82 TRO LLIN G D IME INC H TO-220AB Part Marking Information WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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