IRL3705NSTRL International Rectifier, IRL3705NSTRL Datasheet

MOSFET N-CH 55V 89A D2PAK

IRL3705NSTRL

Manufacturer Part Number
IRL3705NSTRL
Description
MOSFET N-CH 55V 89A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL3705NSTRL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 46A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
89A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
98nC @ 5V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
3.8W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL3705NSTRLPBF
Manufacturer:
BCD
Quantity:
12 000
Company:
Part Number:
IRL3705NSTRLPBF
Quantity:
9 000
Company:
Part Number:
IRL3705NSTRLPBF
Quantity:
10 000
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3705NL) is available for low-
profile applications.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
P
V
E
I
E
dv/dt
T
T
R
R
AR
D
D
DM
2
AS
AR
J
STG
D
D
GS
Pak is suitable for high current applications because of
JA
@ T
@ T
JC
@T
@T
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL3705NS)
Low-profile through-hole (IRL3705NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
2
Pak is a surface mount power package capable of
C
C
A
C
= 25°C
= 25°C
= 100°C
= 25°C
on-resistance per silicon area.
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Parameter
Parameter
GS
GS
@ 10V
@ 10V
This
G
300 (1.6mm from case )
Typ.
–––
–––
D P ak
IRL3705NS/L
HEXFET
2
-55 to + 175
D
S
Max.
310
170
± 16
340
89
3.8
1.1
1.7
5.0
63
46
®
R
T O -26 2
Power MOSFET
DS(on)
Max.
V
0.90
40
I
D
DSS
= 89A
PD - 91502C
= 55V
= 0.01
Units
Units
W/°C
V/ns
°C/W
mJ
mJ
°C
W
W
A
V
A
5/12/98

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IRL3705NSTRL Summary of contents

Page 1

... Low-profile through-hole (IRL3705NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ...

Page 2

IRL3705NS/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2. 2.5V 2 0µ 5° 0.1 1 ...

Page 4

IRL3705NS iss ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE ...

Page 6

IRL3705NS 0.0 1 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G 5.0 V ...

Page 7

Peak Diode Recovery dv/dt Test Circuit + D.U dv/dt controlled Driver same type as D.U. D.U.T. - Device Under Test Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery ...

Page 8

IRL3705NS Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 ...

Page 9

Package Outline TO-262 Outline Part Marking Information TO-262 IRL3705NS/L ...

Page 10

IRL3705NS/L Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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