IRF7524D1TR International Rectifier, IRF7524D1TR Datasheet

MOSFET P-CH 20V 1.7A MICRO8

IRF7524D1TR

Manufacturer Part Number
IRF7524D1TR
Description
MOSFET P-CH 20V 1.7A MICRO8
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7524D1TR.pdf (8 pages)

Specifications of IRF7524D1TR

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
270 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
240pF @ 15V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF7524D1TR
Manufacturer:
Infineon
Quantity:
2 300
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7524D1TR
Manufacturer:
IR
Quantity:
20 000
Description
Absolute Maximum Ratings
Thermal Resistance Ratings
Notes:
The FETKY
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
the smallest footprint available in an SOIC outline. This makes the Micro8
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8
environments such as portable electronics and PCMCIA cards.
www.irf.com
Parameter
R
I
I
I
P
P
V
dv/dt
T
D
D
DM
D
D
GS
J,
Pulse width
JA
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
Co-packaged HEXFET
MOSFET and Schottky Diode
P-Channel HEXFET
Generation 5 Technology
Micro8
@ T
@ T
SD
Low V
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
T
@T
@T
STG
A
A
A
A
-1.2A, di/dt
= 25°C
= 70°C
= 25°C
= 70°C
F
TM
TM
Schottky Rectifier
Footprint
TM
family of co-packaged HEXFETs and Schottky diodes offer the
300µs – duty cycle
package, with half the footprint area of the standard SO-8, provides
100A/µs, V
Parameter
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
TM
Junction-to-Ambient
DD
will allow it to fit easily into extremely thin application
V
Power
2%
(BR)DSS
, T
PRELIMINARY
J
150°C
GS
G
A
S
A
@ -4.5V
FETKY MOSFET & Schottky Diode
1
2
3
4
T op V ie w
TM
TM
an ideal
8
7
6
5
-55 to +150
Maximum
IRF7524D1
Maximum
K
1.25
± 12
K
D
D
-1.7
-1.4
-5.0
-14
0.8
10
100
Schottky Vf = 0.39V
R
DS(on)
V
DSS
Micro8
= -20V
= 0.27
TM
Units
mW/°C
°C/W
Units
V/ns
W
°C
A
V
PD -91648C
1
01/29/99

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IRF7524D1TR Summary of contents

Page 1

... Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. ...

Page 2

... Max. Forward voltage drop FM I Max. Reverse Leakage current RM C Max. Junction Capacitance t dv/dt Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET 25°C (unless otherwise specified) J Min. Typ. Max. Units Conditions -20 ––– ––– V ...

Page 3

VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V 1 0.1 -1.50V 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...

Page 4

IRF7524D1 iss ...

Page 5

D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 1.0 0.8 0.6 VGS = -2.5V 0.4 VGS = -5.0V 0.2 0.0 0.0 ...

Page 6

IRF7524D1 Schottky Diode Characteristics 0.1 0.0 0.2 0.4 F orwa rd V oltage Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics 50° ...

Page 7

TM Micro8 Package Details 0.2 5 (.010 0.0 8 ...

Page 8

IRF7524D1 TM Micro8 Tape & Reel ...

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