IRLML2502TR International Rectifier, IRLML2502TR Datasheet
IRLML2502TR
Specifications of IRLML2502TR
IRLML2502
IRLML2502
IRLML2502CT
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IRLML2502TR Summary of contents
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... Low Profile (<1.1mm) Available in Tape and Reel l l Fast Switching These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V 2.25V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° ...
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1MHz iss rss gd 1000 oss ds gd 800 C iss 600 400 200 C oss ...
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Fig 9. Maximum Drain Current Vs. 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com ...
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Id = 4.0A 0.03 0.02 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V GS, Gate -to -Source Voltage ( V ) Fig 11. On-Resistance Vs. Gate Voltage 6 0.30 0.20 0.10 0.00 5.5 6.0 6.5 7.0 0 Fig ...
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0.10 (.004 NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. ...
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Notes : T his part marking information applies to devices produced before 02/26/2001 EXAMPLE: T HIS IS AN IRLML6302 PART NUMBER PART NUMBER CODE REFERENCE IRLML2402 1B = IRLML2803 1C = IRLML6302 1D = IRLML5103 1E = ...
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TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD ...