IRLML6402TR International Rectifier, IRLML6402TR Datasheet
IRLML6402TR
Specifications of IRLML6402TR
IRLML6402
IRLML6402
IRLML6402CT
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IRLML6402TR Summary of contents
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... Available in Tape and Reel l l Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V 10 -2.25V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° ...
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0V MHZ C iss = rss = C gd 800 C oss = Ciss 600 400 Coss 200 Crss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 SINGLE PULSE 1 (THERMAL RESPONSE) ...
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Id = -3.7A 0.06 0.04 0.02 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 0.20 0.16 0.12 0.08 0.04 0.00 6.0 7.0 0 ...
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bbb RECOMMENDED FOOT PRINT 0.972 3X [.038] 0.95 [.0375] 1.90 [.075] Micro3 (SOT-23/TO-236AB) Part Marking Information PART NUMBER PART NUMB ER CODE REFERENCE IRLML 2402 B = ...
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TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD ...