MOSFET N-CH 40V 104A D2PAK

IRL1104S

Manufacturer Part NumberIRL1104S
DescriptionMOSFET N-CH 40V 104A D2PAK
ManufacturerInternational Rectifier
SeriesHEXFET®
IRL1104S datasheet
 


Specifications of IRL1104S

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs8 mOhm @ 62A, 10VDrain To Source Voltage (vdss)40V
Current - Continuous Drain (id) @ 25° C104AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs68nC @ 4.5VInput Capacitance (ciss) @ Vds3445pF @ 25V
Power - Max2.4WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRL1104S  
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Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL1104S)
Low-profile through-hole (IRL1104L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
2
The D
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-resistance
in any existing surface mount package. The D
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRL1104L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Junction-to-Ambient(PCB Mounted,steady-state)**
JA
www.irf.com
IRL1104S/L
PRELIMINARY
HEXFET
D
G
S
2
2
Pak is
D P ak
Max.
@ 10V
104
GS
@ 10V
74
GS
416
167
340
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
PD -91840
®
Power MOSFET
V
= 40V
DSS
R
= 0.008
DS(on)
I
= 104A
D
T O -26 2
Units
A
2.4
W
W
1.1
W/°C
±16
V
mJ
62
A
17
mJ
5.0
V/ns
°C
Max.
Units
0.9
°C/W
62
1
10/28/98

IRL1104S Summary of contents

  • Page 1

    ... Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with ...

  • Page 2

    ... IRL1104S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 2 2.0 ° 175 C J 1.5 1.0 0 50V 0.0 -60 -40 -20 0 8.0 10.0 Fig 4. Normalized On-Resistance IRL1104S/L VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 2.7V 2.7V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 104A ...

  • Page 4

    ... IRL1104S/L 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 ° 0.1 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...

  • Page 5

    ... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRL1104S D.U. 4.5V µ d(off ...

  • Page 6

    ... IRL1104S 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 800 1 5V 600 400 200 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b. Gate Charge Test Circuit ...

  • Page 7

    ... Ground Plane Low Leakage Inductance Current Transformer - - dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Waveform Body Diode Forward Current di/dt Waveform Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% IRL1104S =10V * ...

  • Page 8

    ... IRL1104S Pak Package Details 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP & 4.5M , 198 TRO L LIN SIO ATSINK & Part Marking TIO 4.69 (.1 85) 4.20 (.1 65) 1.3 2 (.05 2) 1 ...

  • Page 9

    ... TO-262 Package Details Part Marking www.irf.com IRL1104S/L 9 ...

  • Page 10

    ... IRL1104S Pak Tape and Reel IRE CTIO (. (. IRE C TIO N 33 0.00 (1 4 LLIN ILL WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K& ...

  • Page 11

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...