IRF7521D1 International Rectifier, IRF7521D1 Datasheet - Page 4

• Manufacturer Part Number: IRF7521D1
• Description: MOSFET N-CH 20V 2.4A MICRO-8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7521D1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7521D1
4
1 0 0
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
0.1
1 0
0
1
0.4
Fig 7. Typical Source-Drain Diode
1
T = 1 50 °C
J
Fig 5. Typical Capacitance Vs.
C
C
C
0.6
V
iss
oss
rss
V
D S
S D
Forward Voltage
V
C
C
C
, D rain-to-S ourc e V oltage (V )
, S ourc e-to-D rain V oltage (V )
G S
is s
rs s
o ss
Drain-to-Source Voltage
0.8
= 0V ,
= C
= C
= C
T = 25 °C
J
g s
d s
g d
1.0
+ C
+ C
1 0
g d
gd
f = 1M H z
1.2
, C
Power Mosfet Characteristics
d s
1.4
S H O R T E D
V
G S
1.6
= 0V
1 0 0
1.8
A
A
1 0 0
0.1
1 0
1 0
1
8
6
4
2
0
0.1
0
Fig 8. Maximum Safe Operating Area
T
T
S ing le P u lse
I
V
D
A
J
D S
= 1 .7A
Fig 6. Typical Gate Charge Vs.
= 25 °C
= 15 0°C
= 16 V
O P E R A TIO N IN TH IS A R E A L IM ITE D
V
D S
Q , Total G ate C harge (nC )
2
G
, D rain-to-S ource V oltage (V )
Gate-to-Source Voltage
1
B Y R
4
D S (o n)
FO R TE S T CIR C U IT
6
S E E FIG U R E 9
1 0
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1 0 0 µ s
1 0 m s
1 m s
8
1 0 0
1 0
A
A