IRF7521D1 International Rectifier, IRF7521D1 Datasheet - Page 5

• Manufacturer Part Number: IRF7521D1
• Description: MOSFET N-CH 20V 2.4A MICRO-8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7521D1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1000
100
0.1
Fig 10. Typical On-Resistance Vs. Drain
10
0.00001
1.0
0.8
0.6
0.4
0.2
0.0
1
0.0
D = 0.50
0.20
0.10
0.05
0.02
0.01
1.0
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
(THERMAL RESPONSE)
2.0
0.0001
I , D rain C urrent (A)
D
SINGLE PULSE
Current
3.0
V
GS
4.0
= 2.5V
0.001
Power Mosfet Characteristics
5.0
V
V
t , Rectangular Pulse Duration (sec)
1
GS
6.0
= 5.0V
= 4.0V
0.01
7.0
A
Fig 11. Typical On-Resistance Vs. Gate
0 . 1 2
0 . 1 0
0 . 0 8
0 . 0 6
0 . 0 4
0.1
0.0
V
G S
1. Duty factor D = t / t
2. Peak T = P
Notes:
2.0
, Gate-to-Source Voltage (V)
1
J
Voltage
DM
x Z
4.0
1
thJC
I
P
2
D
IRF7521D1
DM
= 1.7A
+ T
10
C
t
1
6.0
t
2
5
100
8.0
A