IRF7521D1 International Rectifier, IRF7521D1 Datasheet - Page 6

• Manufacturer Part Number: IRF7521D1
• Description: MOSFET N-CH 20V 2.4A MICRO-8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7521D1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7521D1
6
Fig. 12 -Typical Forward Voltage Drop Characteristics
0.1
1 0
1
0.0
Forwa rd V o lta ge D ro p - V
0.2
Forward Votage Drop - V
0.4
0.6
Schottky Diode Characteristics
T = 1 50 °C
T = 1 25 °C
T = 2 5 °C
J
J
J
FM
F
( V)
0.8
(V )
1.0
1 6 0
1 4 0
1 2 0
1 0 0
Fig.14 - Maximum Allowable Ambient
8 0
6 0
4 0
2 0
0
0 . 0
A v era ge Forw ard C urrent - I
D = 3/4
D = 1/2
D = 1/3
D = 1/4
D = 1/5
Temp. Vs. Forward Current
Fig. 13 - Typical Values of Reverse
0 . 5
J
Current Vs. Reverse Voltage
1 . 0
1 . 5
V = 20V
R
Square wave
r
t hJA
2 . 0
www.irf.com
R
= 100°C/W
F(AV )
2 . 5
DC
(A )
3 . 0
A