IRF7607 International Rectifier, IRF7607 Datasheet

MOSFET N-CH 20V 6.5A MICRO-8

IRF7607

Manufacturer Part Number
IRF7607
Description
MOSFET N-CH 20V 6.5A MICRO-8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7607

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 6.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 5V
Input Capacitance (ciss) @ Vds
1310pF @ 15V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7607
Manufacturer:
RENESAS
Quantity:
5 935
Part Number:
IRF7607
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7607TR
Manufacturer:
MARVELL
Quantity:
2 030
Part Number:
IRF7607TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7607TRPBF
Manufacturer:
IR
Quantity:
20 000
Absolute Maximum Ratings
Thermal Resistance
Description
New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
V
I
I
I
P
P
V
T
R
www.irf.com
D
D
DM
GS
J,
DS
D
D
Low Profile (<1.1mm)
Available in Tape & Reel
@ T
@ T
JA
Trench Technology
N-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current Q
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
S
@ 4.5V
@ 4.5V
G
S
S
S
1
2
3
4
T o p V ie w
HEXFET
8
7
6
5
-55 to + 150
Max.
Max.
0.014
Micro8
± 12
70
6.5
5.2
1.8
1.2
D
D
D
D
20
50
A
A
®
R
IRF7607
DS(on)
Power MOSFET
V
DSS
PD - 93845A
= 0.030
= 20V
Units
Units
W/°C
°C/W
W
°C
V
A
V
1
02/26/01

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IRF7607 Summary of contents

Page 1

... Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET Micro8 Max 4.5V GS 0.014 ± 150 Max 93845A IRF7607 ® Power MOSFET 20V DSS 0.030 D DS(on) Units 20 V 6.5 5 1.8 W 1.2 W/°C V °C Units °C/W 1 02/26/01 ...

Page 2

... IRF7607 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... TOP BOTTOM 10 ° 1 0.1 10 100 Fig 2. Typical Output Characteristics 2 1.5 ° 1.0 0.5 = 15V 0.0 -60 -40 -20 3.0 3.5 Fig 4. Normalized On-Resistance IRF7607 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V 1.50V 1.50V  20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 5.3A  ...

Page 4

... IRF7607  2000 1MHz iss rss 1600 oss iss 1200 800 400  C oss  C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10  ° 150 ° 0.1 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 Fig 6 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 0.20 0.10 0.00 -0.10 -0.20 -0.30 -0.40 -50 125 150 ° Fig 10. Typical Vgs(th) Variance Vs. 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7607 Id = 250µA - 100 125 Temperature ( °C ) Juction Temperature  Notes: 1. Duty factor ...

Page 6

... IRF7607 0.040 0.035 0.030 0.025 Id = 5.3A 0.020 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 0.10 0.08 0.06 0.04 0.02 6.0 7.0 8.0 0 Fig 13. Typical On-Resistance Vs. VGS= 2.5V VGS = 4. Drain Current (A ) Drain Current www.irf.com ...

Page 7

... . DATE CODE (YW YEAR W = WEEK WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR Y 2001 1 2002 2 2003 3 1994 4 1995 5 1996 6 1997 7 1998 8 1999 9 2000 (27-52) IF PRECEDED BY A LETTER YEAR Y 2001 A 2002 B 2003 C 1994 D 1995 E 1996 F 1997 G 1998 H 1999 J 2000 K IRF7607 . . . SIC SIC 2 ° 6 ° ...

Page 8

... IRF7607 Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches & - SIO LIM & WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. ...

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