IRFL1006 International Rectifier, IRFL1006 Datasheet

IRFL1006

Manufacturer Part Number

IRFL1006

Description

MOSFET N-CH 60V 1.6A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFL1006.pdf (9 pages)

Specifications of IRFL1006

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

220 mOhm @ 1.6A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

1.6A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

8nC @ 10V

Input Capacitance (ciss) @ Vds

160pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFL1006

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFL1006TRPBF

Manufacturer:

Quantity:

20 000

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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

Thermal Resistance

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

www.irf.com

dv/dt

@ T

Surface Mount

Advanced Process Technology

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated

STG

= 25°C

= 70°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy *

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)*

Junction-to-Amb. (PCB Mount, steady state)**

Parameter

@ 10V**

@ 10V*

Typ.

HEXFET

-55 to + 150

S O T -2 2 3

Max.

± 20

2.3

1.6

1.3

6.4

1.0

8.3

5.0

2.1

1.6

0.1

IRFL1006

Max.

Power MOSFET

120

DS(on)

DSS

= 1.6A

= 0.22

= 60V

PD - 91876

Units

mW/°C

Units

°C/W

V/ns

°C

3/29/99

Related parts for IRFL1006

IRFL1006 Summary of contents

Page 1

... When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com HEXFET 10V 10V 10V 150 Typ 91876 IRFL1006 ® Power MOSFET V = 60V DSS R = 0.22 DS(on 1. Max. Units 2.3 1 ...

Page 2

... IRFL1006 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 150 C ° J 2.0 1.5 1.0 0.5 = 25V 0.0 -60 -40 -20 7.0 8.0 Fig 4. Normalized On-Resistance IRFL1006 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 1.6A ...

Page 4

... IRFL1006 300 1MHz iss rss 240 oss iss 180 120 C oss 60 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 ° 150 0.1 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 0 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R G 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRFL1006 D.U. µ d(off ...

Page 6

... IRFL1006 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 140 120 100 Starting T , Junction Temperature ( Fig 12c. Maximum Avalanche Energy 12V V GS Fig 13b. Gate Charge Test Circuit I D TOP 0.72A 1 ...

Page 7

... Low Leakage Inductance Current Transformer - - dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Waveform Body Diode Forward Current di/dt Waveform Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% Fig 14. For N-Channel HEXFETS IRFL1006 + + =10V * ...

Page 8

... IRFL1006 Package Outline SOT-223 (TO-261AA) Outline Part Marking Information SOT-223 TIO www.irf.com ...

Page 9

... IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ www.irf.com (. (. (. (. (. (. (. (. (. (. .40 (. . CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. 3/99 IRFL1006 (. (. (. (. (. (. (. (. 0. (. ...

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