IRF3706 International Rectifier, IRF3706 Datasheet

MOSFET N-CH 20V 77A TO-220AB

IRF3706

Manufacturer Part Number
IRF3706
Description
MOSFET N-CH 20V 77A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF3706

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
77A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 4.5V
Input Capacitance (ciss) @ Vds
2410pF @ 10V
Power - Max
88W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3706

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF3706
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF3706
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF3706L
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF3706S
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF3706STRPBF
Quantity:
2 342
l
l
Benefits
l
l
l
Applications
www.irf.com
Notes  through
V
V
I
I
I
P
P
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
DS
GS
D
D
θJC
θcs
θJA
θJA
Converters with Synchronous Rectification
for Telecom and Industrial Use
Computer Processor Power
and Current
,T
High Frequency DC-DC Isolated
@ T
@ T
High Frequency Buck Converters for
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
@T
@T
STG
C
C
C
C
= 25°C
= 100°C Continuous Drain Current, V
= 25°C Maximum Power Dissipation
= 100°C Maximum Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient( PCB mount)
DS(on)
Junction and Storage Temperature Range
are on page 11
at 4.5V V
Parameter
Parameter
i
fi
GS
SMPS MOSFET
GS
GS
@ 10V
@ 10V
gi
f
TO-220AB
IRF3706
V
20V
DSS
Typ.
0.50
–––
–––
–––
-55 to + 175
HEXFET Power MOSFET
Max.
0.59
± 12
280
77
54
88
44
20
R
h
IRF3706S
DS(on)
D
2
8.5mΩ
Pak
Max.
–––
1.7
62
40
max
IRF3706S
IRF3706L
IRF3706
IRF3706L
TO-262
Units
Units
W/°C
°C/W
°C
W
W
V
V
A
77A†
I
D
1

Related parts for IRF3706

IRF3706 Summary of contents

Page 1

... GS Typ. ––– f 0.50 fi ––– gi ––– IRF3706 IRF3706S IRF3706L HEXFET Power MOSFET R max I DS(on) D 8.5mΩ 77A† Pak TO-262 IRF3706S IRF3706L Max. Units 20 V ± 280 0.59 W/°C - 175 °C Max. Units 1.7 ––– ...

Page 2

... IRF3706/S/L Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage 20 (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficie ––– (BR)DSS J R Static Drain-to-Source On-Resistan ––– DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

... Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com IRF3706/S/L Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 ...

Page 4

... IRF3706/S/L Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com ...

Page 5

... Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRF3706/S/L ≤ 1 ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 10 d(on) r d(off) Fig 10b. Switching Time Waveforms + - ...

Page 6

... IRF3706/S D.U 20V V GS 0.01 Ω Charge 6 15V DRIVER + (BR)DSS 12V Current Regulator Same Type as D.U.T. 50KΩ .2µF .3µF + D.U. 3mA Current Sampling Resistors www.irf.com ...

Page 7

... Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® For N-channel HEXFET power MOSFETs IRF3706/S/L „ P.W. Period [ ] *** V =10V ...

Page 8

... IRF3706/S/L E XAMP 1010 L OT CODE 1789 19, 1997 INE "C" Note: "P" in assembly line position indicates "Lead-Free" 8 INT E R NAT IONAL OGO CODE DAT E CODE 1997 INE C www.irf.com ...

Page 9

... INT ERNAT IONAL RECT IF IER LOGO AS SEMBLY LOT CODE www.irf.com PART NUMBER INTERNATIONAL RECTIF IER F530S LOGO DAT E CODE YEAR 0 = 2000 AS S EMBLY WEEK CODE L INE L PART NUMBER F 530S DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK SEMBLY CODE IRF3706/S/L 9 ...

Page 10

... IRF3706/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS SEMB LED ON WW 19, 1997 SEMB LY LINE "C" Note: "P" in ass embly line position indicates "Lead-F ree" PART NUMBER INTERNATIONAL RECT IF IER ...

Page 11

... Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 12/04 IRF3706/S/L 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 23 ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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