IRF3706 International Rectifier, IRF3706 Datasheet - Page 2

• Manufacturer Part Number: IRF3706
• Description: MOSFET N-CH 20V 77A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3706

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2410pF @ 10V
• Power - Max: 88W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3706

IRF3706/S/L
Static @ T
V
∆V
V
I
I
Dynamic @ T
gfs
Rg
Q
Q
Q
Q
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
t
Q
t
Q
R
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
rr
(BR)DSS
GS(th)
AS
SD
iss
oss
rss
g
gs
gd
oss
rr
rr
DS(on)
2
(BR)DSS
/∆T
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage 20
Breakdown Voltage Temp. Coefficie –––
Static Drain-to-Source On-Resistan –––
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Gate Resistance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Ã
Ù
d
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.6
53
Typ.
–––
–––
0.021
2410
1070
0.88
0.82
–––
–––
–––
–––
–––
–––
–––
140
–––
–––
6.0
7.3
1.8
8.0
5.5
6.8
4.8
11
23
16
87
17
45
65
49
78
10.5
-200
77
–––
–––
100
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
280
–––
120
8.5
8.3
1.3
22
20
35
12
24
68
98
74
2
h
Max.
220
28
V/°C Reference to 25°C, I
mΩ
nC
nC
nC
µA
nA
pF
ns
ns
ns
Ω
V
V
S
A
V
V
V
V
V
V
V
V
V
V
V
I
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
di/dt = 100A/µs
T
di/dt = 100A/µs
D
D
J
J
J
J
GS
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
GS
DD
G
GS
GS
DS
= 28A
= 28A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8Ω
= V
= 16V, V
= 16V, V
= 16V, I
= 10V
= 10V
= 0V, I
= 10V, I
= 4.5V, I
= 2.8V, I
= 12V
= -12V
= 4.5V
= 0V, V
= 10V
= 4.5V
= 0V
GS
, I
Conditions
D
Conditions
Conditions
D
DS
S
F
D
D
= 250µA
D
D
GS
GS
S
F
= 250µA
= 36A, V
= 36A, V
= 15A
= 57A
= 12A
= 7.5A
=10V
Units
= 36A, V
= 36A, V
= 0V
= 0V, T
mJ
A
www.irf.com
D
= 1mA
R
GS
J
=20V
R
GS
= 125°C
=20V
= 0V
= 0V
e
e