IRFB23N20D International Rectifier, IRFB23N20D Datasheet - Page 3

• Manufacturer Part Number: IRFB23N20D
• Description: MOSFET N-CH 200V 24A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB23N20D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 1960pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB23N20D

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0.01
100
0.1
100
10
0.1
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
1
0.1
5.0
TOP
BOTTOM
T = 175 C
V
J
DS
V
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
6.0
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
°
T = 25 C
J
1
7.0
°
5.0V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
8.0
J
DS
10
= 50V
°
9.0
10.0
100
IRFB/IRFS/IRFSL23N20D
100
Fig 2. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
0.1
I =
TOP
BOTTOM
D
24A
V
DS
T , Junction Temperature ( C)
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
20µs PULSE WIDTH
T = 175 C
5.0V
J
10
°
V
°
GS
=
10V
3
100