IRFB33N15D International Rectifier, IRFB33N15D Datasheet

MOSFET N-CH 150V 33A TO-220AB

IRFB33N15D

Manufacturer Part Number
IRFB33N15D
Description
MOSFET N-CH 150V 33A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFB33N15D

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
56 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
90nC @ 10V
Input Capacitance (ciss) @ Vds
2020pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFB33N15D

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB33N15D
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFB33N15DPBF
Manufacturer:
IOR/PB-FREE
Quantity:
45
Part Number:
IRFB33N15DPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFB33N15DPBF
Quantity:
9 000
Notes
Typical SMPS Topologies
www.irf.com
Applications
Benefits
Absolute Maximum Ratings
I
I
I
P
P
V
dv/dt
T
T
D
D
DM
STG
D
D
GS
J
@ T
@ T
Effective C
App. Note AN1001)
and Current
Telecom 48V input Active Clamp Forward Converter
High frequency DC-DC converters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
@T
Switching Losses
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
through
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Power Dissipation
are on page 11
to Simplify Design, (See
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
IRFB33N15D
TO-220AB
V
150V
DSS
300 (1.6mm from case )
HEXFET
-55 to + 175
10 lbf•in (1.1N•m)
IRFS33N15D
R
Max.
130
170
± 30
3.8
1.1
4.4
DS(on)
33
24
D
2
0.056
Pak
®
IRFSL33N15D
Power MOSFET
IRFB33N15D
IRFS33N15D
max
IRFSL33N15D
PD- 93903
TO-262
Units
W/°C
33A
V/ns
I
°C
W
A
V
D
1
6/29/00

Related parts for IRFB33N15D

IRFB33N15D Summary of contents

Page 1

... Notes through are on page 11 www.irf.com SMPS MOSFET HEXFET V DSS 150V TO-220AB IRFB33N15D @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) PD- 93903 IRFB33N15D IRFS33N15D IRFSL33N15D ® Power MOSFET R max I DS(on) D 0.056 33A 2 D Pak TO-262 IRFS33N15D IRFSL33N15D Max. Units ...

Page 2

IRFB/IRFS/IRFSL33N15D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4. 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 100 ° ...

Page 4

IRFB/IRFS/IRFSL33N15D 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE (THERMAL ...

Page 6

IRFB/IRFS/IRFSL33N15D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped ...

Page 7

D.U Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET www.irf.com IRFB/IRFS/IRFSL33N15D ...

Page 8

IRFB/IRFS/IRFSL33N15D TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 9

D Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 ...

Page 10

IRFB/IRFS/IRFSL33N15D TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com ...

Page 11

D Pak Tape & Reel Information TIO ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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