MOSFET N-CH 40V 104A TO-220AB

IRL1104

Manufacturer Part NumberIRL1104
DescriptionMOSFET N-CH 40V 104A TO-220AB
ManufacturerInternational Rectifier
SeriesHEXFET®
IRL1104 datasheet
 


Specifications of IRL1104

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs8 mOhm @ 62A, 10VDrain To Source Voltage (vdss)40V
Current - Continuous Drain (id) @ 25° C104AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs68nC @ 4.5VInput Capacitance (ciss) @ Vds3445pF @ 25V
Power - Max167WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRL1104  
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Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
®
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
®
HEXFET
power MOSFETs are well known for, provides
the designer with an extremely efficient device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
Single Pulse Avalanche Energy ‚
E
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
Peak Diode Recovery dv/dt ƒ
dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient
JA
www.irf.com
G
@ 10V
GS
@ 10V
GS
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
––––
PD -91805
IRL1104
®
HEXFET
Power MOSFET
D
V
= 40V
DSS
R
= 0.008
DS(on)
I
= 104A…
D
S
TO-220AB
Max.
Units
104…
74
A
416
167
W
1.1
W/°C
±16
V
340
mJ
62
A
17
mJ
5.0
V/ns
-55 to + 175
°C
Typ.
Max.
Units
––––
0.9
0.50
––––
°C/W
––––
62
10/19/99
1

IRL1104 Summary of contents

  • Page 1

    ... CS R Junction-to-Ambient JA www.irf.com G @ 10V GS @ 10V GS 300 (1.6mm from case) 10 lbf•in (1.1N•m) Min. –––– –––– –––– PD -91805 IRL1104 ® HEXFET Power MOSFET 40V DSS R = 0.008 DS(on 104A… TO-220AB Max. Units 104… ...

  • Page 2

    ... IRL1104 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resis- DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

  • Page 3

    ... DS 20µs PULSE WIDTH 1 2.0 4.0 6 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com 1000 ° 10 100 ° 50V 8.0 10.0 IRL1104 VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 100 2.7V 10 20µs PULSE WIDTH T = 175 0.1 1 ...

  • Page 4

    ... IRL1104 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 10 ° 0.1 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...

  • Page 5

    ... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRL1104 D.U. 4.5V Pulse Width µs Duty Factor d(on) ...

  • Page 6

    ... IRL1104 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 800 1 5V 600 400 + 200 Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b. Gate Charge Test Circuit ...

  • Page 7

    ... Low Leakage Inductance Current Transformer - - dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% HEXFET power MOSFETs „ P.W. Period * V =10V IRL1104 7 ...

  • Page 8

    ... IRL1104 TO-220AB Package Details Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82 LIN TO-220AB Part Marking WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 838 4630 IR TAIWAN:16 Fl ...

  • Page 9

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...