IRF1010NL International Rectifier, IRF1010NL Datasheet
IRF1010NL
Specifications of IRF1010NL
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IRF1010NL Summary of contents
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... The 2 D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate typical surface mount application. The through-hole version (IRF1010NL) is available for low- profile applications. Absolute Maximum Ratings Parameter 25° ...
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... IRF1010NS/IRF1010NL Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... V , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° 20µs PULSE WIDTH Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com IRF1010NS/IRF1010NL 1000 TOP BOTTOM 100 10 ° 1 0.1 10 100 Fig 2. Typical Output Characteristics 2 2.0 ° 175 C J 1.5 1.0 0.5 = 25V ...
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... IRF1010NS/IRF1010NL 6000 0V, C iss = rss = C gd 5000 C oss = Ciss 4000 3000 Coss 2000 1000 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 T = 175 C ° ° 0.1 0.0 0.6 1.2 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 ...
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... SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRF1010NS/IRF1010NL Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) ...
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... IRF1010NS/IRF1010NL Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 500 400 300 200 100 Starting T , Junction Temperature( C) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit I D TOP 18A ...
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... Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V Fig 14. For N-channel www.irf.com IRF1010NS/IRF1010NL Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance Ground Plane ƒ Low Leakage Inductance Current Transformer - - dv/dt controlled controlled by Duty Factor " ...
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... IRF1010NS/IRF1010NL 2 D Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055 1.78 (.070) 15.49 (.610) 1.27 (.050) 14.73 (.580 1.40 (.055) 3X 1.14 (.045) 0.93 (.037) 3X 0.69 (.027) 5.08 (.200 ) 0.25 (.010 & 14.5M , 1982 LLIN & Part Marking Information 2 D Pak ...
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... Package Outline TO-262 Outline Part Marking Information TO-262 www.irf.com IRF1010NS/IRF1010NL 9 ...
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... IRF1010NS/IRF1010NL Tape & Reel Information 2 D Pak TIO (. (. 330.00 (14.173 - WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 (. (. (. (. (. (. (. (. (. (. (. (. (. (. .50 (. .80 (. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...