MOSFET N-CH 150V 43A TO-262

IRF3415L

Manufacturer Part NumberIRF3415L
DescriptionMOSFET N-CH 150V 43A TO-262
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF3415L datasheet
 


Specifications of IRF3415L

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs42 mOhm @ 22A, 10VDrain To Source Voltage (vdss)150V
Current - Continuous Drain (id) @ 25° C43AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs200nC @ 10VInput Capacitance (ciss) @ Vds2400pF @ 25V
Power - Max3.8WMounting TypeThrough Hole
Package / CaseTO-262-3 (Straight Leads)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRF3415L  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
Page 1/11

Download datasheet (162Kb)Embed
Next
Advanced Process Technology
Surface Mount (IRF3415S)
Low-profile through-hole (IRF3415L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
The D
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
2
D
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3415L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Junction-to-Ambient ( PCB Mounted,steady-state)**
JA
IRF3415S/L
HEXFET
D
G
S
This
2
D P ak
Max.
@ 10V
GS
@ 10V
GS
150
200
± 20
590
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
PD - 91509C
®
Power MOSFET
V
= 150V
DSS
R
= 0.042
DS(on)
I
= 43A
D
T O -26 2
Units
43
30
A
3.8
W
W
1.3
W/°C
V
mJ
22
A
20
mJ
5.0
V/ns
°C
Max.
Units
0.75
°C/W
40
5/13/98

IRF3415L Summary of contents

  • Page 1

    ... The 2 D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate typical surface mount application. The through-hole version (IRF3415L) is available for low- profile applications. Absolute Maximum Ratings Parameter 25° ...

  • Page 2

    IRF3415S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

  • Page 3

    VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 20us PULSE WIDTH Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° T ...

  • Page 4

    IRF3415S/L 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss C ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) ...

  • Page 6

    IRF3415S Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

  • Page 7

    Peak Diode Recovery dv/dt Test Circuit + D.U dv/dt controlled Driver same type as D.U. D.U.T. - Device Under Test Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery ...

  • Page 8

    IRF3415S Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 ...

  • Page 9

    Package Outline TO-262 Outline Part Marking Information TO-262 IRF3415S/L ...

  • Page 10

    IRF3415S/L Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE ...

  • Page 11

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...