IRL1104L International Rectifier, IRL1104L Datasheet

IRL1104L

Manufacturer Part Number

IRL1104L

Description

MOSFET N-CH 40V 104A TO-262

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRL1104S.pdf (11 pages)

Specifications of IRL1104L

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

8 mOhm @ 62A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

104A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

68nC @ 4.5V

Input Capacitance (ciss) @ Vds

3445pF @ 25V

Power - Max

2.4W

Mounting Type

Through Hole

Package / Case

TO-262-3 (Straight Leads)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRL1104L

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRL1104L

Manufacturer:

Quantity:

12 500

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Description

Absolute Maximum Ratings

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-resistance

in any existing surface mount package. The D

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0W

in a typical surface mount application.

The through-hole version (IRL1104L) is available for low-

profile applications.

www.irf.com

dv/dt

STG

@ T

Logic-Level Gate Drive

Advanced Process Technology

Surface Mount (IRL1104S)

Low-profile through-hole (IRL1104L)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient(PCB Mounted,steady-state)**

Parameter

PRELIMINARY

Pak is

@ 10V

300 (1.6mm from case )

Typ.

–––

D P ak

HEXFET

-55 to + 175

IRL1104S/L

Max.

104

416

167

340

2.4

1.1

±16

5.0

T O -26 2

Power MOSFET

DS(on)

Max.

0.9

DSS

= 104A

= 0.008

= 40V

PD -91840

Units

W/°C

°C/W

V/ns

°C

10/28/98

Related parts for IRL1104L

IRL1104L Summary of contents

Page 1

... The D suitable for high current applications because of its low internal connection resistance and can dissipate typical surface mount application. The through-hole version (IRL1104L) is available for low- profile applications. Absolute Maximum Ratings Parameter 25° ...

Page 2

IRL1104S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRL1104L International Rectifier, IRL1104L Datasheet

IRL1104L

Specifications of IRL1104L

Available stocks

Related parts for IRL1104L

IRL1104L Summary of contents

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Page 2

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Page 5

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Page 8

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Page 11

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