IRL2505L International Rectifier, IRL2505L Datasheet

IRL2505L

Manufacturer Part Number

IRL2505L

Description

MOSFET N-CH 55V 104A TO-262

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRL2505S.pdf (11 pages)

Specifications of IRL2505L

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

8 mOhm @ 54A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

104A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

130nC @ 5V

Input Capacitance (ciss) @ Vds

5000pF @ 25V

Power - Max

3.8W

Mounting Type

Through Hole

Package / Case

TO-262-3 (Straight Leads)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRL2505L

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRL2505L

Manufacturer:

Quantity:

12 500

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Download datasheet (184Kb)

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRL2505L) is available for low-

profile applications.

Absolute Maximum Ratings

Thermal Resistance

dv/dt

STG

Pak is suitable for high current applications because of

@ T

Logic-Level Gate Drive

Advanced Process Technology

Surface Mount (IRL2505S)

Low-profile through-hole (IRL2505L)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

on-resistance per silicon area.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Parameter

@ 10V

This

Typ.

300 (1.6mm from case )

–––

D P ak

HEXFET

-55 to + 175

IRL2505S/L

Max.

104

360

200

500

3.8

1.3

±16

5.0

T O -26 2

Power MOSFET

DS(on)

Max.

0.75

DSS

= 104A

PD - 91326D

= 0.008

= 55V

Units

W/°C

°C/W

V/ns

°C

5/12/98

Related parts for IRL2505L

IRL2505L Summary of contents

Page 1

... The 2 D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate typical surface mount application. The through-hole version (IRL2505L) is available for low- profile applications. Absolute Maximum Ratings Parameter 25° ...

Page 2

IRL2505S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRL2505L International Rectifier, IRL2505L Datasheet

IRL2505L

Specifications of IRL2505L

Available stocks

Related parts for IRL2505L

IRL2505L Summary of contents

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Page 2

Page 3

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Page 5

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Page 8

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