MOSFET P-CH 30V 2A MICRO8

IRF7526D1

Manufacturer Part NumberIRF7526D1
DescriptionMOSFET P-CH 30V 2A MICRO8
ManufacturerInternational Rectifier
SeriesFETKY™
IRF7526D1 datasheet
 


Specifications of IRF7526D1

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureDiode (Isolated)
Rds On (max) @ Id, Vgs200 mOhm @ 1.2A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C2AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs11nC @ 10VInput Capacitance (ciss) @ Vds180pF @ 25V
Power - Max1.25WMounting TypeSurface Mount
Package / CaseMicro8™Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
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Co-packaged HEXFET Power
MOSFET and Schottky Diode
P-Channel HEXFET
Low V
Schottky Rectifier
F
Generation 5 Technology
Micro8
Footprint
TM
Description
TM
The FETKY
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
TM
The new Micro8
package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8
device for applications where printed circuit board space is at a premium. The low
TM
profile (<1.1mm) of the Micro8
will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
D
A
Continuous Drain Current, V
I
@ T
= 70°C
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
D
A
Power Dissipation
P
@T
= 70°C
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance Ratings
Parameter
R
Junction-to-Ambient
JA
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
-1.2A, di/dt
160A/µs, V
SD
DD
Pulse width
300µs – duty cycle
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
FETKY
1
A
2
A
3
S
4
G
T op V ie w
@ -4.5V
GS
V
, T
150°C
(BR)DSS
J
2%
PD -91649C
IRF7526D1
MOSFET & Schottky Diode
TM
8
K
V
= -30V
DSS
7
K
R
= 0.20
6
D
DS(on)
5
D
Schottky Vf = 0.39V
TM
Micro8
TM
an ideal
Maximum
Units
-2.0
-1.6
A
-16
1.25
W
0.8
10
mW/°C
± 20
V
-5.0
V/ns
-55 to +150
°C
Maximum
Units
100
°C/W
1
5/7/99

IRF7526D1 Summary of contents

  • Page 1

    ... Pulse width 300µs – duty cycle When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance www.irf.com FETKY -4. 150°C (BR)DSS -91649C IRF7526D1 MOSFET & Schottky Diode -30V DSS 0. DS(on Schottky Vf = 0.39V TM Micro8 TM an ideal Maximum Units -2 ...

  • Page 2

    ... IRF7526D1 MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

  • Page 3

    ... Power Mosfet Characteristics 1 0 TOP BOTTOM - 3. 0 0.1 Fig 2. Typical Output Characteristics 2 .2A D 1.5 1.0 0 0.0 A -60 -40 6.0 6.5 7.0 Fig 4. Normalized On-Resistance IRF7526D1 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V -3 0µ 0° rain-to-S ource V oltage ( - - unc tion T em perature (° ...

  • Page 4

    ... IRF7526D1 iss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° °C J 0.1 0.4 0.6 0.8 1 ourc e-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage 4 Power Mosfet Characteristics Fig 6. Typical Gate Charge Vs ing lse 0.1 1.2 1.4 1 Fig 8. Maximum Safe Operating Area ...

  • Page 5

    ... Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 1.5 1 -4. rain C urrent ( Fig 10. Typical On-Resistance Vs. Drain Current www.irf.com Power Mosfet Characteristics 0.01 0 Rectangular Pulse Duration (sec Fig 11. Typical On-Resistance Vs. Gate IRF7526D1 Notes: 1. Duty factor Peak thJC -2. ate-to-S ourc e V oltage ( Voltage 100 A ...

  • Page 6

    ... IRF7526D1 Schottky Diode Characteristics 0.1 0.0 0.2 0.4 F orwa rd V oltage Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics 0.1 0.01 0.001 0.0001 50° 25° 5° 0.6 0.8 1 (V) F Fig.14 - Maximum Allowable Ambient ° ° 0°C 7 5° ° °C ...

  • Page 7

    ... 0.0 8 (.0 03 DIME N S ION . DIME N S ION : INC DIME N S ION INC Part Marking www.irf.com SSIGN UAL 0.10 (.004 IRF7526D1 INC ILLIME MIN .044 0 .91 1. .008 0 .10 0. .014 0 .25 0.36 C .005 .007 0.13 0.18 D .116 .120 2.95 3.05 e .0256 B ASIC ...

  • Page 8

    ... IRF7526D1 TM Micro8 Tape & Reel & & WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 221 8371 IR TAIWAN:16 Fl ...