IRF7526D1 International Rectifier, IRF7526D1 Datasheet - Page 4

• Manufacturer Part Number: IRF7526D1
• Description: MOSFET P-CH 30V 2A MICRO8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7526D1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7526D1
4
0.1
1 0
4 0 0
3 0 0
2 0 0
1 0 0
1
0.4
0
Fig 7. Typical Source-Drain Diode
1
T = 1 50 °C
J
Fig 5. Typical Capacitance Vs.
C
C
C
-V
-V
iss
o ss
rss
0.6
S D
D S
V
C
C
C
, S ourc e-to-D rain V oltage (V )
Forward Voltage
, D rain-to-S ourc e V oltage (V )
G S
is s
rs s
o s s
Drain-to-Source Voltage
= 0 V ,
= C
= C
= C
0.8
T = 2 5 °C
g s
g d
d s
J
+ C
+ C
1 0
g d
g d
f = 1 M H z
1.0
, C
Power Mosfet Characteristics
d s
S H O R TE D
1.2
V
G S
= 0V
1.4
1 0 0
A
A
1 0 0
0.1
1 0
2 0
1 6
1 2
1
8
4
0
1
0
Fig 8. Maximum Safe Operating Area
T
T
S ing le P u lse
I
D
A
J
Fig 6. Typical Gate Charge Vs.
= -1 .2 A
= 25 °C
= 15 0°C
O P E R A TIO N IN TH IS A R E A L IM ITE D
-V
2
D S
Q , Total G ate C harge (nC )
G
Gate-to-Source Voltage
, D rain-to-S ourc e V oltage (V )
4
B Y R
V
V
D S
D S
1 0
6
D S (o n)
= -24 V
= -15 V
FO R TE S T CIR C U IT
S E E FIG U R E 9
8
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1 0 0 µ s
1 m s
1 0 m s
1 0
1 0 0
1 2
A
A